Control of SAG-GaN at the Nanoscale

Elias Semlali; Evelyne Gil; Geoffrey Avit; Yamina André; Arthur Sauvagnat; Jihen Jridi; Andriy V. Moskalenko; Philip A. Shields; Névine Rochat; Adeline Grenier; Agnès Trassoudaine

doi:10.1021/acs.cgd.4c00925

Control of SAG-GaN at the Nanoscale

Elias Semlali, Evelyne Gil, Geoffrey Avit, Yamina André, Arthur Sauvagnat, Jihen Jridi, Andriy V. Moskalenko, Philip A. Shields, Névine Rochat, Adeline Grenier, Agnès Trassoudaine

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Abstract

Selective area growth (SAG) of GaN nanowires was performed on GaN on c-plane sapphire templates masked with SiN using hydride vapor phase epitaxy (HVPE). GaN nanowires exhibited various morphologies, discussed as a function of the pattern design, the partial pressure of the Ga gaseous precursor, the composition of the carrier gas, and the growth temperature. The morphologies are elucidated by involving a comparative study of growth rates of facets relative to each other. CL measurements showed high emission quality for GaN nanowires grown at 930 °C. This work places HVPE as an effective epitaxial technique for growing III-N nanostructure-based devices at a low cost.

Original language	English
Pages (from-to)	8907-8913
Number of pages	7
Journal	Crystal Growth and Design
Volume	24
Issue number	21
Early online date	9 Oct 2024
DOIs	https://doi.org/10.1021/acs.cgd.4c00925
Publication status	Published - 6 Nov 2024

Funding

Funders	Funder number
French National Research Agency
European Commission
Région Auvergne Rhône	DRV_PIP_2021–252_IP_NANOSPRING
Engineering and Physical Sciences Research Council	EP/V055224/1
Engineering and Physical Sciences Research Council
International Research Center	CAP 20–25
GaNeXT	ANR-11-LABX-0014
LabEx IMobS3	ANR-10-LABX-16–01

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

Access to Document

10.1021/acs.cgd.4c00925

Control of SAG-GaN at the nanoscale
This document is the Accepted Manuscript version of a Published Work that appeared in final form in Crystal, Growth & Design, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.cgd.4c00925.
Accepted author manuscript, 1.02 MB

Cite this

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title = "Control of SAG-GaN at the Nanoscale",

abstract = "Selective area growth (SAG) of GaN nanowires was performed on GaN on c-plane sapphire templates masked with SiN using hydride vapor phase epitaxy (HVPE). GaN nanowires exhibited various morphologies, discussed as a function of the pattern design, the partial pressure of the Ga gaseous precursor, the composition of the carrier gas, and the growth temperature. The morphologies are elucidated by involving a comparative study of growth rates of facets relative to each other. CL measurements showed high emission quality for GaN nanowires grown at 930 °C. This work places HVPE as an effective epitaxial technique for growing III-N nanostructure-based devices at a low cost.",

author = "Elias Semlali and Evelyne Gil and Geoffrey Avit and Yamina Andr{\'e} and Arthur Sauvagnat and Jihen Jridi and Moskalenko, \{Andriy V.\} and Shields, \{Philip A.\} and N{\'e}vine Rochat and Adeline Grenier and Agn{\`e}s Trassoudaine",

year = "2024",

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day = "6",

doi = "10.1021/acs.cgd.4c00925",

language = "English",

volume = "24",

pages = "8907--8913",

journal = "Crystal Growth and Design",

issn = "1528-7483",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Control of SAG-GaN at the Nanoscale

AU - Semlali, Elias

AU - Gil, Evelyne

AU - Avit, Geoffrey

AU - André, Yamina

AU - Sauvagnat, Arthur

AU - Jridi, Jihen

AU - Moskalenko, Andriy V.

AU - Shields, Philip A.

AU - Rochat, Névine

AU - Grenier, Adeline

AU - Trassoudaine, Agnès

PY - 2024/11/6

Y1 - 2024/11/6

N2 - Selective area growth (SAG) of GaN nanowires was performed on GaN on c-plane sapphire templates masked with SiN using hydride vapor phase epitaxy (HVPE). GaN nanowires exhibited various morphologies, discussed as a function of the pattern design, the partial pressure of the Ga gaseous precursor, the composition of the carrier gas, and the growth temperature. The morphologies are elucidated by involving a comparative study of growth rates of facets relative to each other. CL measurements showed high emission quality for GaN nanowires grown at 930 °C. This work places HVPE as an effective epitaxial technique for growing III-N nanostructure-based devices at a low cost.

AB - Selective area growth (SAG) of GaN nanowires was performed on GaN on c-plane sapphire templates masked with SiN using hydride vapor phase epitaxy (HVPE). GaN nanowires exhibited various morphologies, discussed as a function of the pattern design, the partial pressure of the Ga gaseous precursor, the composition of the carrier gas, and the growth temperature. The morphologies are elucidated by involving a comparative study of growth rates of facets relative to each other. CL measurements showed high emission quality for GaN nanowires grown at 930 °C. This work places HVPE as an effective epitaxial technique for growing III-N nanostructure-based devices at a low cost.

UR - https://www.scopus.com/pages/publications/85205996087

U2 - 10.1021/acs.cgd.4c00925

DO - 10.1021/acs.cgd.4c00925

M3 - Article

AN - SCOPUS:85205996087

SN - 1528-7483

VL - 24

SP - 8907

EP - 8913

JO - Crystal Growth and Design

JF - Crystal Growth and Design

IS - 21

ER -

Control of SAG-GaN at the Nanoscale

Abstract

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Control of SAG-GaN at the Nanoscale

Abstract

Funding

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Projects

Displacement Talbot Lithography: accelerating a versatile and low-cost patterning technique for precision manufacturing

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

Cite this