TY - JOUR
T1 - Control of SAG-GaN at the Nanoscale
AU - Semlali, Elias
AU - Gil, Evelyne
AU - Avit, Geoffrey
AU - André, Yamina
AU - Sauvagnat, Arthur
AU - Jridi, Jihen
AU - Moskalenko, Andriy V.
AU - Shields, Philip A.
AU - Rochat, Névine
AU - Grenier, Adeline
AU - Trassoudaine, Agnès
PY - 2024/11/6
Y1 - 2024/11/6
N2 - Selective area growth (SAG) of GaN nanowires was performed on GaN on c-plane sapphire templates masked with SiN using hydride vapor phase epitaxy (HVPE). GaN nanowires exhibited various morphologies, discussed as a function of the pattern design, the partial pressure of the Ga gaseous precursor, the composition of the carrier gas, and the growth temperature. The morphologies are elucidated by involving a comparative study of growth rates of facets relative to each other. CL measurements showed high emission quality for GaN nanowires grown at 930 °C. This work places HVPE as an effective epitaxial technique for growing III-N nanostructure-based devices at a low cost.
AB - Selective area growth (SAG) of GaN nanowires was performed on GaN on c-plane sapphire templates masked with SiN using hydride vapor phase epitaxy (HVPE). GaN nanowires exhibited various morphologies, discussed as a function of the pattern design, the partial pressure of the Ga gaseous precursor, the composition of the carrier gas, and the growth temperature. The morphologies are elucidated by involving a comparative study of growth rates of facets relative to each other. CL measurements showed high emission quality for GaN nanowires grown at 930 °C. This work places HVPE as an effective epitaxial technique for growing III-N nanostructure-based devices at a low cost.
UR - http://www.scopus.com/inward/record.url?scp=85205996087&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.4c00925
DO - 10.1021/acs.cgd.4c00925
M3 - Article
AN - SCOPUS:85205996087
SN - 1528-7483
VL - 24
SP - 8907
EP - 8913
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 21
ER -
