Conductance switching in organic ferroelectric field-effect transistors

Kamal Asadi, Paul W.M. Blom, Dago M. De Leeuw

Research output: Contribution to journalArticlepeer-review

29 Citations (SciVal)


Staggered bottom-contact top-gate organic ferroelectric field-effect transistors are fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as ferroelectric gate and poly[bis(4-phenyl)(2,4,6- trimethylphenyl)amine] as semiconductor. Polarization reversal of the ferroelectric gate is monitored by displacement transients in the gate current. By varying both the source and drain biases and by using fully and partially polarized transistors, we show that conductance switching only requires polarization of P(VDF-TrFE) at the source electrode. Polarization at the drain is irrelevant and does not impede charge extraction.

Original languageEnglish
Article number053306
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 1 Aug 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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