Complete polarisation control of GaAs gain-guided top-surface emitting vertical cavity lasers

P. Dowd, P. J. Heard, J. A. Nicholson, L. Raddatz, I. H. White, R. V. Penty, J. C.C. Day, G. C. Allen, S. W. Corzine, M. R.T. Tan

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Abstract

Complete polarisation control is demonstrated in circular gain-guided top-surface emitting vertical cavity lasers by etching a line near the cavity aperture. The etch orientation determines the dominant polarisation state of emission by modifying the spontaneous emission coupling into each polarisation state. This is sufficient to pin the polarisation in monomode and multimode devices.

Original languageEnglish
Pages (from-to)1315-1317
Number of pages3
JournalElectronics Letters
Volume33
Issue number15
DOIs
Publication statusPublished - 17 Jul 1997

Keywords

  • Gallium arsenide
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Dowd, P., Heard, P. J., Nicholson, J. A., Raddatz, L., White, I. H., Penty, R. V., Day, J. C. C., Allen, G. C., Corzine, S. W., & Tan, M. R. T. (1997). Complete polarisation control of GaAs gain-guided top-surface emitting vertical cavity lasers. Electronics Letters, 33(15), 1315-1317. https://doi.org/10.1049/el:19970894