Abstract
Measured and modelled six port S-parameters for three wide FETs are presented from 0.1-20GHz. Directional coupling is observed between source and drain lines, the directivity of which is tunable by d.c. gate bias. Tunable directivities of greater than 20dB from 6 to 12GHz are predicted for the de-embedded device.
| Original language | English |
|---|---|
| Article number | 369914 |
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | IEE Colloquium (Digest) |
| Issue number | 92 |
| Publication status | Published - 1 Dec 1994 |
| Event | Proceedings of the Colloquium on Modelling, Design and Application of MMIC'S - London, UK Duration: 17 Jun 1994 → 17 Jun 1994 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering