Measured and modelled six port S-parameters for three wide FETs are presented from 0.1-20GHz. Directional coupling is observed between source and drain lines, the directivity of which is tunable by d.c. gate bias. Tunable directivities of greater than 20dB from 6 to 12GHz are predicted for the de-embedded device.
|Number of pages||6|
|Journal||IEE Colloquium (Digest)|
|Publication status||Published - 1 Dec 1994|
|Event||Proceedings of the Colloquium on Modelling, Design and Application of MMIC'S - London, UK|
Duration: 17 Jun 1994 → 17 Jun 1994
ASJC Scopus subject areas
- Electrical and Electronic Engineering