Abstract
Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography-based nano-patterning technique and could pave the way to new and exciting memory device concepts.
Original language | English |
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Article number | 1901091 |
Journal | Advanced Electronic Materials |
Volume | 6 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Feb 2020 |
Funding
M.K. and K.A. acknowledge the financial support of the Max-Planck Institute for Polymer Research and Alexander von Humboldt Foundation (Germany) through the Sofja Kovalevskaja Award, the technical support from H.J. Gutmann. A.S., K.L., E.Y., H.F., D.D., A.B., and T.D.A. acknowledge the King Abdullah University of Science and Technology (KAUST) for financial support. The authors thank Prof. P. W.M. Blom for fruitful discussion.
Keywords
- ferroelectrics
- lithography
- piezoelectric force microscopy
- polymers
- tunnel junctions
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials