Colossal Tunneling Electroresistance in Co-Planar Polymer Ferroelectric Tunnel Junctions

Manasvi Kumar, Dimitra G. Georgiadou, Akmaral Seitkhan, Kalaivanan Loganathan, Emre Yengel, Hendrik Faber, Dipti Naphade, Aniruddha Basu, Thomas D. Anthopoulos, Kamal Asadi

Research output: Contribution to journalArticlepeer-review

15 Citations (SciVal)


Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography-based nano-patterning technique and could pave the way to new and exciting memory device concepts.

Original languageEnglish
Article number1901091
JournalAdvanced Electronic Materials
Issue number2
Publication statusPublished - 1 Feb 2020


  • ferroelectrics
  • lithography
  • piezoelectric force microscopy
  • polymers
  • tunnel junctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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