Colossal Tunneling Electroresistance in Co-Planar Polymer Ferroelectric Tunnel Junctions

Manasvi Kumar; Dimitra G. Georgiadou; Akmaral Seitkhan; Kalaivanan Loganathan; Emre Yengel; Hendrik Faber; Dipti Naphade; Aniruddha Basu; Thomas D. Anthopoulos; Kamal Asadi

doi:10.1002/aelm.201901091

Colossal Tunneling Electroresistance in Co-Planar Polymer Ferroelectric Tunnel Junctions

Manasvi Kumar, Dimitra G. Georgiadou, Akmaral Seitkhan, Kalaivanan Loganathan, Emre Yengel, Hendrik Faber, Dipti Naphade, Aniruddha Basu, Thomas D. Anthopoulos, Kamal Asadi

Department of Physics

Research output: Contribution to journal › Article › peer-review

20 Citations (SciVal)

Abstract

Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 10⁶% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography-based nano-patterning technique and could pave the way to new and exciting memory device concepts.

Original language	English
Article number	1901091
Journal	Advanced Electronic Materials
Volume	6
Issue number	2
DOIs	https://doi.org/10.1002/aelm.201901091
Publication status	Published - 1 Feb 2020

Funding

M.K. and K.A. acknowledge the financial support of the Max-Planck Institute for Polymer Research and Alexander von Humboldt Foundation (Germany) through the Sofja Kovalevskaja Award, the technical support from H.J. Gutmann. A.S., K.L., E.Y., H.F., D.D., A.B., and T.D.A. acknowledge the King Abdullah University of Science and Technology (KAUST) for financial support. The authors thank Prof. P. W.M. Blom for fruitful discussion.

Keywords

ferroelectrics
lithography
piezoelectric force microscopy
polymers
tunnel junctions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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abstract = "Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography-based nano-patterning technique and could pave the way to new and exciting memory device concepts.",

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AU - Loganathan, Kalaivanan

AU - Yengel, Emre

AU - Faber, Hendrik

AU - Naphade, Dipti

AU - Basu, Aniruddha

AU - Anthopoulos, Thomas D.

AU - Asadi, Kamal

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Colossal Tunneling Electroresistance in Co-Planar Polymer Ferroelectric Tunnel Junctions

Abstract

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Keywords

ASJC Scopus subject areas

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