TY - JOUR
T1 - Cobalt(III) diazabutadiene precursors for metal deposition
T2 - Nanoparticle and thin film growth
AU - Pugh, Thomas
AU - Cosham, Samuel D.
AU - Hamilton, Jeff A.
AU - Kingsley, Andrew J.
AU - Johnson, Andrew L.
PY - 2013/12/2
Y1 - 2013/12/2
N2 - We report the synthesis and characterization of a family of cobalt(III) metal precursors, based around cyclopentadienyl and diazabutadiene ligands. The molecular structure of the complexes cyclopentadienyl-Cobalt(III)(N,N′- dicyclohexyl-diazabutadiene) (2c) and cyclopentadienyl-Cobalt(III)(N,N′- dimesityl-diazabutadiene) (2d) are described, as determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted the isopropyl derivative CpCo(iPr2-dab) (2a) as a possible cobalt metal chemical vapor deposition (CVD) precursor. Atmospheric pressure CVD (AP-CVD) was employed using precursor 2a to synthesize thin films of metallic cobalt on silicon substrates under an atmosphere of hydrogen (H2). Analysis of the thin films deposited at substrate temperatures of 250 C, 275 C, 300 C, 325 C, and 350 C, respectively, by scanning electron microscopy (SEM) and atomic force microscopy (AFM) reveal temperature dependent growth features: films grown at 325 and 350 C are continuous and pinhole free, whereas those films grown at substrate temperatures of 250 C, 275 C, and 300 C consist of crystalline nanoparticles. Powder X-ray diffraction (PXRD) and X-ray photoelectron spectroscopy (XPS) all show the films to be high purity metallic cobalt. Raman spectroscopy has also been used to prove the absence of cobalt silicides at the substrate/thin film interface.
AB - We report the synthesis and characterization of a family of cobalt(III) metal precursors, based around cyclopentadienyl and diazabutadiene ligands. The molecular structure of the complexes cyclopentadienyl-Cobalt(III)(N,N′- dicyclohexyl-diazabutadiene) (2c) and cyclopentadienyl-Cobalt(III)(N,N′- dimesityl-diazabutadiene) (2d) are described, as determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted the isopropyl derivative CpCo(iPr2-dab) (2a) as a possible cobalt metal chemical vapor deposition (CVD) precursor. Atmospheric pressure CVD (AP-CVD) was employed using precursor 2a to synthesize thin films of metallic cobalt on silicon substrates under an atmosphere of hydrogen (H2). Analysis of the thin films deposited at substrate temperatures of 250 C, 275 C, 300 C, 325 C, and 350 C, respectively, by scanning electron microscopy (SEM) and atomic force microscopy (AFM) reveal temperature dependent growth features: films grown at 325 and 350 C are continuous and pinhole free, whereas those films grown at substrate temperatures of 250 C, 275 C, and 300 C consist of crystalline nanoparticles. Powder X-ray diffraction (PXRD) and X-ray photoelectron spectroscopy (XPS) all show the films to be high purity metallic cobalt. Raman spectroscopy has also been used to prove the absence of cobalt silicides at the substrate/thin film interface.
UR - http://www.scopus.com/inward/record.url?scp=84889254922&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1021/ic402317g
U2 - 10.1021/ic402317g
DO - 10.1021/ic402317g
M3 - Article
SN - 0020-1669
VL - 52
SP - 13719
EP - 13729
JO - Inorganic Chemistry
JF - Inorganic Chemistry
IS - 23
ER -