cobalt on silicon substrates under an atmosphere (760 torr) of hydrogen (H2). Analysis of the thin films deposited at substrate temperatures of 325, 350, 375, and 400 °C, respectively, by scanning electron microscopy and atomic force microscopy reveal temperature-dependent growth features. Films grown at these temperatures are continuous, pinhole-free, and can be seen to be composed of hexagonal particles clearly visible in the electron micrograph. Powder X-ray diffraction and X-ray photoelectron spectroscopy all show the films to be highly crystalline, high-purity metallic cobalt. Raman spectroscopy was unable to detect the presence of cobalt silicides at the substrate/thin film interface
- Thin film
ASJC Scopus subject areas
- Materials Chemistry
- Inorganic Chemistry
FingerprintDive into the research topics of 'Cobalt(I) olefin complexes: precursors for metal-organic chemical vapor deposition of high purity cobalt metal thin films'. Together they form a unique fingerprint.
Dataset for Cobalt(I) olefin Complexes: Precursors for Metal-Organic Chemical Vapor Deposition of High Purity Cobalt Metal Thin Films
Johnson, A. (Creator), Hamilton, J. (Creator), Pugh, T. (Creator), Richards, S. (Data Collector) & Kingsley, A. J. (Data Collector), University of Bath, 27 Jun 2016