Abstract
We report the synthesis and characterization of a family of organometallic cobalt(I) metal precursors based around cyclopentadienyl and diene ligands. The molecular structures of the complexes cyclopentadienyl−cobalt(I) diolefin complexes are described, as determined by single-crystal X-ray diffraction analysis. Thermogravimetric analysis and thermal stability studies of the complexes highlighted the isoprene, dimethyl butadiene, and cyclohexadiene derivatives [(C5H5)Co(η4-CH2CHC(Me)CH2)] (1), [(C5H5)Co(η4-CH2C(Me)C(Me)CH2)] (2), and [(C5H5)Co(η4-C6H8)] (4) as possible cobalt metal organic chemical vapor deposition (MOCVD) precursors. Atmospheric pressure MOCVD was employed using precursor 1, to synthesize thin films of metallic
cobalt on silicon substrates under an atmosphere (760 torr) of hydrogen (H2). Analysis of the thin films deposited at substrate temperatures of 325, 350, 375, and 400 °C, respectively, by scanning electron microscopy and atomic force microscopy reveal temperature-dependent growth features. Films grown at these temperatures are continuous, pinhole-free, and can be seen to be composed of hexagonal particles clearly visible in the electron micrograph. Powder X-ray diffraction and X-ray photoelectron spectroscopy all show the films to be highly crystalline, high-purity metallic cobalt. Raman spectroscopy was unable to detect the presence of cobalt silicides at the substrate/thin film interface
cobalt on silicon substrates under an atmosphere (760 torr) of hydrogen (H2). Analysis of the thin films deposited at substrate temperatures of 325, 350, 375, and 400 °C, respectively, by scanning electron microscopy and atomic force microscopy reveal temperature-dependent growth features. Films grown at these temperatures are continuous, pinhole-free, and can be seen to be composed of hexagonal particles clearly visible in the electron micrograph. Powder X-ray diffraction and X-ray photoelectron spectroscopy all show the films to be highly crystalline, high-purity metallic cobalt. Raman spectroscopy was unable to detect the presence of cobalt silicides at the substrate/thin film interface
Original language | English |
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Pages (from-to) | 7141-7151 |
Journal | Inorganic Chemistry |
Volume | 55 |
Issue number | 14 |
Early online date | 17 Jun 2016 |
DOIs | |
Publication status | Published - 18 Jul 2016 |
Keywords
- Cobalt
- MOCVD
- Thin film
- Organometallics
- Precursors
ASJC Scopus subject areas
- Materials Chemistry
- Inorganic Chemistry
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Dive into the research topics of 'Cobalt(I) olefin complexes: precursors for metal-organic chemical vapor deposition of high purity cobalt metal thin films'. Together they form a unique fingerprint.Profiles
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Andrew Johnson
- Department of Chemistry - Senior Lecturer
- Centre for Sustainable Chemical Technologies (CSCT)
- Centre for Nanoscience and Nanotechnology
- Centre for Doctoral Training in Aerosol Science
- IAAPS: Propulsion and Mobility
- Institute of Sustainability and Climate Change
Person: Research & Teaching, Core staff, Affiliate staff
Datasets
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Dataset for Cobalt(I) olefin Complexes: Precursors for Metal-Organic Chemical Vapor Deposition of High Purity Cobalt Metal Thin Films
Johnson, A. (Creator), Hamilton, J. (Creator), Pugh, T. (Creator), Richards, S. (Data Collector) & Kingsley, A. J. (Data Collector), University of Bath, 27 Jun 2016
DOI: 10.15125/BATH-00200
Dataset
Equipment
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Avance 300 MHz Nuclear Magnetic Resonance (NMR) Spectrometer (1South)
Material and Chemical Characterisation (MC2)Facility/equipment: Equipment
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Raman confocal microscope RENISHAM INVIA
Material and Chemical Characterisation (MC2)Facility/equipment: Equipment