@article{fad6dfb05e834be19676b54397f71615,
title = "CMOS Voltage-to-Frequency Converter With Temperature Drift Compensation",
keywords = "CMOS integrated circuits, compensation, detector circuits, signal conditioning circuits, signal processing equipment, voltage-frequency convertors, CMOS process, complementary metal-oxide-semiconductor, differential voltage-to-frequency converter, power 0.4 mW, power 1.8 W, sensor signal conditioning, size 0.18 mum, temperature -20 C to 120 C, temperature drift compensation, voltage 0 V to 1.2 V, Converters, Logic gates, Resistors, Temperature dependence, Temperature sensors, Wireless sensor networks, Analog circuits, complementary metal–oxide–semiconductor (CMOS) analog integrated circuits, integrated circuits, signal processing, voltage–frequency conversion",
author = "Valero, {M. R.} and S. Celma and B. Calvo and N. Medrano",
year = "2011",
doi = "10.1109/TIM.2011.2128690",
language = "English",
volume = "60",
pages = "3232--3234",
journal = "IEEE Transactions on Instrumentation and Measurement",
issn = "0018-9456",
publisher = "IEEE",
number = "9",
}