Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE

Elias Semlali, Geoffrey Avit, Yamina André, Evelyne Gil, Andriy Moskalenko, Philip Shields, Vladimir G. Dubrovskii, Andrea Cattoni, Jean Christophe Harmand, Agnès Trassoudaine

Research output: Contribution to journalArticlepeer-review

Abstract

Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of GaN on sapphire masked with SiN x . We discuss two occurrences related to axial and radial growth of GaN nanowires. A growth suppression phenomenon was observed under certain conditions, which was circumvented by applying the cyclic growth mode. A theoretical model involving inhibiting species was developed to understand the growth suppression phenomenon on the masked substrates. Various morphologies of GaN nanocrystals were obtained by controlling the competition between the growth and blocking mechanisms as a function of the temperature and vapor phase composition. The optimal growth conditions were revealed for obtaining regular arrays of ∼5 μm long GaN nanowires.

Original languageEnglish
Article number265604
JournalNanotechnology
Volume35
Issue number26
Early online date12 Apr 2024
DOIs
Publication statusE-pub ahead of print - 12 Apr 2024

Data Availability Statement

All data that support the findings of this study are included within the article (and any supplementary files).

Keywords

  • GaN nanowires
  • hydride vapor phase epitaxy
  • selective area growth

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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