Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE

Elias Semlali, Geoffrey Avit, Yamina André, Evelyne Gil, Andriy Moskalenko, Philip Shields, Vladimir G. Dubrovskii, Andrea Cattoni, Jean Christophe Harmand, Agnès Trassoudaine

Research output: Contribution to journalArticlepeer-review

2 Citations (SciVal)

Abstract

Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of GaN on sapphire masked with SiN x . We discuss two occurrences related to axial and radial growth of GaN nanowires. A growth suppression phenomenon was observed under certain conditions, which was circumvented by applying the cyclic growth mode. A theoretical model involving inhibiting species was developed to understand the growth suppression phenomenon on the masked substrates. Various morphologies of GaN nanocrystals were obtained by controlling the competition between the growth and blocking mechanisms as a function of the temperature and vapor phase composition. The optimal growth conditions were revealed for obtaining regular arrays of ∼5 μm long GaN nanowires.

Original languageEnglish
Article number265604
JournalNanotechnology
Volume35
Issue number26
Early online date12 Apr 2024
DOIs
Publication statusPublished - 24 Jun 2024

Data Availability Statement

All data that support the findings of this study are included within the article (and any supplementary files).

Funding

We acknowledge support from GaNeXT (ANR-11-LABX0014). GaNeXT belongs to the public funded ‘Investissement d’Avenir’ program managed by the French ANR agency. This work was also supported by Région Auvergne Rhône-Alpes; Pack Ambition International NanoSpring DRV_PIP_2021–252_IP_NANOSPRING (http://www.auvergnerhonealpes.fr/77-logo.htm). This work was also supported by the International Research Center ‘Innovation Transportation and Production Systems’ of the I-SITE CAP 20–25. It was also funded by the program ‘Investissements d’avenir’ of the French ANR agency, the French government IDEX-SITE initiative 16-μIDEX-0001 (CAP 20–25), the European Commission (Auvergne FEDER Funds), and the Region Auvergne in the framework of the LabEx IMobS3 (ANR-10-LABX-16-01). The authors thank 2MAtech, Aubiere, France, for scanning electron microscopy measurements. This work also received funding from the H2020 ERC POC project ENUF, Grant No. 790448. VGD gratefully acknowledges financial support of St. Petersburg State University under the research Grant No. 75746688. RRL acknowledges the financial support of the Natural Sciences and Engineering Research Council of Canada from Grants RGPIN-2018-04015 and RGPAS-2018- 522624. The authors would like to acknowledge financial support of the EPSRC, UK via Grant No. EP/V055224/1, ‘Displacement Talbot Lithography: accelerating a versatile and low-cost patterning technique for precision manufacturing’.

Keywords

  • GaN nanowires
  • hydride vapor phase epitaxy
  • selective area growth

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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