Chemical vapour deposition of group Vb metal phosphide thin films

C S Blackman; C J Carmalt; S A O'Neill; I P Parkin; K C Molloy; L Apostolico

doi:10.1039/b304084b

Chemical vapour deposition of group Vb metal phosphide thin films

C S Blackman, C J Carmalt, S A O'Neill, I P Parkin, K C Molloy, L Apostolico

Department of Chemistry

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14 Citations (SciVal)

Abstract

The atmospheric pressure chemical vapour deposition (APCVD) reaction of VCl4 or VOCl3 with cyclohexylphosphine at substrate temperatures of 600 degreesC deposits thin films of amorphous vanadium phosphide. The films are black - gold, hard, chemically resistant and conductive. The APCVD reaction of MCl5 (where M = Nb or Ta) with cyclohexylphosphine at 500 - 600 degreesC deposits films of crystalline beta-MP and at 400 degreesC - 450 degreesC amorphous films of stoichiometry MP are formed. The MP films are metallic, conductive, adherent and chemically resistant.

Original language	English
Pages (from-to)	1930-1935
Number of pages	6
Journal	Journal of Materials Chemistry
Volume	13
Issue number	8
DOIs	https://doi.org/10.1039/b304084b
Publication status	Published - 2003

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ID number: ISI:000184308500015

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title = "Chemical vapour deposition of group Vb metal phosphide thin films",

abstract = "The atmospheric pressure chemical vapour deposition (APCVD) reaction of VCl4 or VOCl3 with cyclohexylphosphine at substrate temperatures of 600 degreesC deposits thin films of amorphous vanadium phosphide. The films are black - gold, hard, chemically resistant and conductive. The APCVD reaction of MCl5 (where M = Nb or Ta) with cyclohexylphosphine at 500 - 600 degreesC deposits films of crystalline beta-MP and at 400 degreesC - 450 degreesC amorphous films of stoichiometry MP are formed. The MP films are metallic, conductive, adherent and chemically resistant.",

author = "Blackman, {C S} and Carmalt, {C J} and O'Neill, {S A} and Parkin, {I P} and Molloy, {K C} and L Apostolico",

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doi = "10.1039/b304084b",

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volume = "13",

pages = "1930--1935",

journal = "Journal of Materials Chemistry",

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publisher = "Royal Society of Chemistry",

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T1 - Chemical vapour deposition of group Vb metal phosphide thin films

AU - Blackman, C S

AU - Carmalt, C J

AU - O'Neill, S A

AU - Parkin, I P

AU - Molloy, K C

AU - Apostolico, L

N1 - ID number: ISI:000184308500015

PY - 2003

Y1 - 2003

N2 - The atmospheric pressure chemical vapour deposition (APCVD) reaction of VCl4 or VOCl3 with cyclohexylphosphine at substrate temperatures of 600 degreesC deposits thin films of amorphous vanadium phosphide. The films are black - gold, hard, chemically resistant and conductive. The APCVD reaction of MCl5 (where M = Nb or Ta) with cyclohexylphosphine at 500 - 600 degreesC deposits films of crystalline beta-MP and at 400 degreesC - 450 degreesC amorphous films of stoichiometry MP are formed. The MP films are metallic, conductive, adherent and chemically resistant.

AB - The atmospheric pressure chemical vapour deposition (APCVD) reaction of VCl4 or VOCl3 with cyclohexylphosphine at substrate temperatures of 600 degreesC deposits thin films of amorphous vanadium phosphide. The films are black - gold, hard, chemically resistant and conductive. The APCVD reaction of MCl5 (where M = Nb or Ta) with cyclohexylphosphine at 500 - 600 degreesC deposits films of crystalline beta-MP and at 400 degreesC - 450 degreesC amorphous films of stoichiometry MP are formed. The MP films are metallic, conductive, adherent and chemically resistant.

U2 - 10.1039/b304084b

DO - 10.1039/b304084b

M3 - Article

SN - 0959-9428

VL - 13

SP - 1930

EP - 1935

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 8

ER -

Chemical vapour deposition of group Vb metal phosphide thin films

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