Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates

Jie Sun; Niclas Lindvall; Matthew Cole; Kenneth B.K. Teo; August Yurgens

doi:10.1109/NEMS.2012.6196711

Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates

Jie Sun, Niclas Lindvall, Matthew Cole, Kenneth B.K. Teo, August Yurgens

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

1 Citation (SciVal)

Abstract

Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics.

Original language	English
Title of host publication	2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
Pages	11-14
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2012.6196711
Publication status	Published - 2012
Event	7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 - Kyoto, Japan Duration: 5 Mar 2012 → 8 Mar 2012

Conference

Conference	7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
Country/Territory	Japan
City	Kyoto
Period	5/03/12 → 8/03/12

Keywords

chemical vapor deposition
Graphene
insulator
nanoelectronics

ASJC Scopus subject areas

Engineering (miscellaneous)

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10.1109/NEMS.2012.6196711

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Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates. / Sun, Jie; Lindvall, Niclas; Cole, Matthew et al.
2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. 2012. p. 11-14 6196711.

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Sun, J, Lindvall, N, Cole, M, Teo, KBK & Yurgens, A 2012, Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates. in 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012., 6196711, pp. 11-14, 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012, Kyoto, Japan, 5/03/12. https://doi.org/10.1109/NEMS.2012.6196711

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abstract = "Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics. ",

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author = "Jie Sun and Niclas Lindvall and Matthew Cole and Teo, {Kenneth B.K.} and August Yurgens",

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AU - Lindvall, Niclas

AU - Cole, Matthew

AU - Teo, Kenneth B.K.

AU - Yurgens, August

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N2 - Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics.

AB - Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics.

KW - chemical vapor deposition

KW - Graphene

KW - insulator

KW - nanoelectronics

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T2 - 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012

Y2 - 5 March 2012 through 8 March 2012

ER -

Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates

Abstract

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Keywords

ASJC Scopus subject areas

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