Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates

Jie Sun, Niclas Lindvall, Matthew Cole, Kenneth B.K. Teo, August Yurgens

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics.

Original languageEnglish
Title of host publication2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
Pages11-14
Number of pages4
DOIs
Publication statusPublished - 2012
Event7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 - Kyoto, Japan
Duration: 5 Mar 20128 Mar 2012

Conference

Conference7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
CountryJapan
CityKyoto
Period5/03/128/03/12

Keywords

  • chemical vapor deposition
  • Graphene
  • insulator
  • nanoelectronics

ASJC Scopus subject areas

  • Engineering (miscellaneous)

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    Sun, J., Lindvall, N., Cole, M., Teo, K. B. K., & Yurgens, A. (2012). Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates. In 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 (pp. 11-14). [6196711] https://doi.org/10.1109/NEMS.2012.6196711