Charge transport in poly(p-phenylene vinylene) at low temperature and high electric field

I. Katsouras; A. Najafi; K. Asadi; A. J. Kronemeijer; A. J. Oostra; L. J.A. Koster; D. M. De Leeuw; P. W.M. Blom

doi:10.1016/j.orgel.2013.03.025

Charge transport in poly(p-phenylene vinylene) at low temperature and high electric field

I. Katsouras
, A. Najafi
, K. Asadi
, A. J. Kronemeijer
, A. J. Oostra
, L. J.A. Koster
, D. M. De Leeuw
, P. W.M. Blom

Department of Physics

Rijksuniversiteit Groningen
Max Planck Institute for Polymer Research
High Tech Campus 4
Philips Research Laboratories
University of Cambridge

Research output: Contribution to journal › Article › peer-review

34 Citations (SciVal)

Abstract

Charge transport in poly(2-methoxy, 5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV)-based hole-only diodes is investigated at high electric fields and low temperatures using a novel diode architecture. Charge carrier densities that are in the range of those in a field-effect transistor are achieved, bridging the gap in the mobility versus charge carrier density plot between polymer-based light-emitting diodes and field-effect transistors. The extended field range that is accessed allows us to discuss the applicability of current theoretical models of charge transport, using numerical simulations. Finally, within a simple approximation, we extract the hopping length for holes in MEH-PPV directly from the experimental data at high fields, and we derive a value of 1.0 ± 0.1 nm.

Original language	English
Pages (from-to)	1591-1596
Number of pages	6
Journal	Organic Electronics
Volume	14
Issue number	6
DOIs	https://doi.org/10.1016/j.orgel.2013.03.025
Publication status	Published - Jun 2013

Funding

The authors wish to thank M. Kuik, G.J. Wetzelaer and H. Nicolai for fruitful discussions, J. Wildeman for the synthesis of MEH-PPV and J. Harkema for technical support. We acknowledge financial support from the Zernike Institute for Advanced Materials and from the European Community’s Seventh Framework Programme (FP7/2007–2013) under the Grant agreements ONE-P No. 212311. L.J.A.K. acknowledges support by a grant from STW/NOW (VENI 11166).

Keywords

Charge transport
Field enhancement
Hopping distance
Mobility
Molecular junction
Organic electronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2013.03.025

Cite this

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title = "Charge transport in poly(p-phenylene vinylene) at low temperature and high electric field",

abstract = "Charge transport in poly(2-methoxy, 5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV)-based hole-only diodes is investigated at high electric fields and low temperatures using a novel diode architecture. Charge carrier densities that are in the range of those in a field-effect transistor are achieved, bridging the gap in the mobility versus charge carrier density plot between polymer-based light-emitting diodes and field-effect transistors. The extended field range that is accessed allows us to discuss the applicability of current theoretical models of charge transport, using numerical simulations. Finally, within a simple approximation, we extract the hopping length for holes in MEH-PPV directly from the experimental data at high fields, and we derive a value of 1.0 ± 0.1 nm.",

keywords = "Charge transport, Field enhancement, Hopping distance, Mobility, Molecular junction, Organic electronics",

author = "I. Katsouras and A. Najafi and K. Asadi and Kronemeijer, \{A. J.\} and Oostra, \{A. J.\} and Koster, \{L. J.A.\} and \{De Leeuw\}, \{D. M.\} and Blom, \{P. W.M.\}",

year = "2013",

month = jun,

doi = "10.1016/j.orgel.2013.03.025",

language = "English",

volume = "14",

pages = "1591--1596",

journal = "Organic Electronics",

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TY - JOUR

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AU - Katsouras, I.

AU - Najafi, A.

AU - Asadi, K.

AU - Kronemeijer, A. J.

AU - Oostra, A. J.

AU - Koster, L. J.A.

AU - De Leeuw, D. M.

AU - Blom, P. W.M.

PY - 2013/6

Y1 - 2013/6

N2 - Charge transport in poly(2-methoxy, 5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV)-based hole-only diodes is investigated at high electric fields and low temperatures using a novel diode architecture. Charge carrier densities that are in the range of those in a field-effect transistor are achieved, bridging the gap in the mobility versus charge carrier density plot between polymer-based light-emitting diodes and field-effect transistors. The extended field range that is accessed allows us to discuss the applicability of current theoretical models of charge transport, using numerical simulations. Finally, within a simple approximation, we extract the hopping length for holes in MEH-PPV directly from the experimental data at high fields, and we derive a value of 1.0 ± 0.1 nm.

AB - Charge transport in poly(2-methoxy, 5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV)-based hole-only diodes is investigated at high electric fields and low temperatures using a novel diode architecture. Charge carrier densities that are in the range of those in a field-effect transistor are achieved, bridging the gap in the mobility versus charge carrier density plot between polymer-based light-emitting diodes and field-effect transistors. The extended field range that is accessed allows us to discuss the applicability of current theoretical models of charge transport, using numerical simulations. Finally, within a simple approximation, we extract the hopping length for holes in MEH-PPV directly from the experimental data at high fields, and we derive a value of 1.0 ± 0.1 nm.

KW - Charge transport

KW - Field enhancement

KW - Hopping distance

KW - Mobility

KW - Molecular junction

KW - Organic electronics

UR - https://www.scopus.com/pages/publications/84876189570

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DO - 10.1016/j.orgel.2013.03.025

M3 - Article

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SN - 1566-1199

VL - 14

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EP - 1596

JO - Organic Electronics

JF - Organic Electronics

IS - 6

ER -

Charge transport in poly(p-phenylene vinylene) at low temperature and high electric field

Abstract

Funding

Keywords

ASJC Scopus subject areas

Access to Document

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