Charge transport in poly(p-phenylene vinylene) at low temperature and high electric field

I. Katsouras, A. Najafi, K. Asadi, A. J. Kronemeijer, A. J. Oostra, L. J.A. Koster, D. M. De Leeuw, P. W.M. Blom

Research output: Contribution to journalArticlepeer-review

32 Citations (SciVal)


Charge transport in poly(2-methoxy, 5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV)-based hole-only diodes is investigated at high electric fields and low temperatures using a novel diode architecture. Charge carrier densities that are in the range of those in a field-effect transistor are achieved, bridging the gap in the mobility versus charge carrier density plot between polymer-based light-emitting diodes and field-effect transistors. The extended field range that is accessed allows us to discuss the applicability of current theoretical models of charge transport, using numerical simulations. Finally, within a simple approximation, we extract the hopping length for holes in MEH-PPV directly from the experimental data at high fields, and we derive a value of 1.0 ± 0.1 nm.

Original languageEnglish
Pages (from-to)1591-1596
Number of pages6
JournalOrganic Electronics
Issue number6
Publication statusPublished - Jun 2013


  • Charge transport
  • Field enhancement
  • Hopping distance
  • Mobility
  • Molecular junction
  • Organic electronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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