Charge transport in disordered semiconducting polymers driven by nuclear tunneling

N. J. Van Der Kaap, I. Katsouras, K. Asadi, P. W.M. Blom, L. J.A. Koster, D. M. De Leeuw

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28 Citations (SciVal)

Abstract

The current density-voltage (J-V) characteristics of hole-only diodes based on poly(2-methoxy, 5-(2′ ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) were measured at a wide temperature and field range. At high electric fields the temperature dependence of the transport vanishes, and all J-V sweeps converge to a power law. Nuclear tunneling theory predicts a power law at high fields that scales with the Kondo parameter. To model the J-V characteristics we have performed master-equation calculations to determine the dependence of charge carrier mobility on electric field, charge carrier density, temperature, and Kondo parameter, using nuclear tunneling transfer rates. We demonstrate that nuclear tunneling, unlike other semiclassical models, provides a consistent description of the charge transport for a large bias, temperature, and carrier density range.

Original languageEnglish
Article number140206
JournalPhysical Review B
Volume93
Issue number14
DOIs
Publication statusPublished - 25 Apr 2016

Funding

We acknowledge financial support from the Max Planck Institute for Polymer Research, the Zernike Institute for Advanced Materials, and from the European Community's Seventh Framework Programme (FP7/2007-2013) under the Grant Agreements ONE-P No. 212311. The work by N.J.v.d.K. is part of the research program of the Foundation for Fundamental Research on Matter (FOM), which is part of the Netherlands Organization for Scientific Research (NWO). K.A. acknowledges Alexander von Humboldt Foundation for the funding provided in the framework of the Sofja Kovalevskaja Award endowed by the Federal Ministry of Education and Research, Germany.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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