Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics

Y Ono, M Khalafalla, K Nishiguchin, Kei Takashina, A Fujiwara, S Horiguchi, H Inokawa, Y Takahashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigate the hole transport in p-channel field-effect transistors doped with boron, at low temperatures (6–28 K). In transistors with a relatively large dimension, we observe the acceptor-mediated hopping and carrier freezeout, both of which are strongly influenced by the gate bias. In nanoscale transistors, these features turn into single-charge tunneling, i.e., the trapping/detrapping of single holes by/from individual acceptors. The statistics of the appearance of the modulation in a few ten samples indicates that the number of acceptors is small, or even just one, indicating that what we have observed is single-charge-transistor operation by a single-acceptor quantum dot.
Original languageEnglish
Pages (from-to)6252-6256
Number of pages5
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008

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Boron
Charge transfer
Transistors
Electronic equipment
Doping (additives)
Field effect transistors
Semiconductor quantum dots
Modulation
Statistics
Temperature

Cite this

Ono, Y., Khalafalla, M., Nishiguchin, K., Takashina, K., Fujiwara, A., Horiguchi, S., ... Takahashi, Y. (2008). Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics. Applied Surface Science, 254(19), 6252-6256. https://doi.org/10.1016/j.apsusc.2008.02.161

Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics. / Ono, Y; Khalafalla, M; Nishiguchin, K; Takashina, Kei; Fujiwara, A; Horiguchi, S; Inokawa, H; Takahashi, Y.

In: Applied Surface Science, Vol. 254, No. 19, 2008, p. 6252-6256.

Research output: Contribution to journalArticle

Ono, Y, Khalafalla, M, Nishiguchin, K, Takashina, K, Fujiwara, A, Horiguchi, S, Inokawa, H & Takahashi, Y 2008, 'Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics', Applied Surface Science, vol. 254, no. 19, pp. 6252-6256. https://doi.org/10.1016/j.apsusc.2008.02.161
Ono, Y ; Khalafalla, M ; Nishiguchin, K ; Takashina, Kei ; Fujiwara, A ; Horiguchi, S ; Inokawa, H ; Takahashi, Y. / Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics. In: Applied Surface Science. 2008 ; Vol. 254, No. 19. pp. 6252-6256.
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