Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate

R Mahapatra; N Poolamai; S Chattopadhyay; N G Wright; A K Chakraborty; K S Coleman; P G Coleman; C P Burrows

doi:10.1063/1.2173713

Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate

R Mahapatra
, N Poolamai
, S Chattopadhyay
, N G Wright
, A K Chakraborty
, K S Coleman
, P G Coleman
, C P Burrows

Department of Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Applied Physics Letters
Volume	88
Issue number	7
DOIs	https://doi.org/10.1063/1.2173713
Publication status	Published - 2006

Bibliographical note

ID number: ISI:000235393700074

Access to Document

10.1063/1.2173713

Cite this

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title = "Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate",

author = "R Mahapatra and N Poolamai and S Chattopadhyay and Wright, \{N G\} and Chakraborty, \{A K\} and Coleman, \{K S\} and Coleman, \{P G\} and Burrows, \{C P\}",

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year = "2006",

doi = "10.1063/1.2173713",

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volume = "88",

journal = "Applied Physics Letters",

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AU - Mahapatra, R

AU - Poolamai, N

AU - Chattopadhyay, S

AU - Wright, N G

AU - Chakraborty, A K

AU - Coleman, K S

AU - Coleman, P G

AU - Burrows, C P

N1 - ID number: ISI:000235393700074

PY - 2006

Y1 - 2006

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DO - 10.1063/1.2173713

M3 - Article

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -