Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate

R Mahapatra, N Poolamai, S Chattopadhyay, N G Wright, A K Chakraborty, K S Coleman, P G Coleman, C P Burrows

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2006

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