Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate

R Mahapatra; N Poolamai; S Chattopadhyay; N G Wright; A K Chakraborty; K S Coleman; P G Coleman; C P Burrows

Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate

R Mahapatra, N Poolamai, S Chattopadhyay, N G Wright, A K Chakraborty, K S Coleman, P G Coleman, C P Burrows

Department of Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Applied Physics Letters
Volume	88
Issue number	7
Publication status	Published - 2006

Bibliographical note

ID number: ISI:000235393700074

Cite this

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title = "Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate",

author = "R Mahapatra and N Poolamai and S Chattopadhyay and Wright, {N G} and Chakraborty, {A K} and Coleman, {K S} and Coleman, {P G} and Burrows, {C P}",

note = "ID number: ISI:000235393700074",

year = "2006",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "7",

}

TY - JOUR

T1 - Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate

AU - Mahapatra, R

AU - Poolamai, N

AU - Chattopadhyay, S

AU - Wright, N G

AU - Chakraborty, A K

AU - Coleman, K S

AU - Coleman, P G

AU - Burrows, C P

N1 - ID number: ISI:000235393700074

PY - 2006

Y1 - 2006

M3 - Article

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -