Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate

R Mahapatra, N Poolamai, S Chattopadhyay, N G Wright, A K Chakraborty, K S Coleman, P G Coleman, C P Burrows

Research output: Contribution to journalArticle

Original languageEnglish
JournalApplied Physics Letters
Volume88
Issue number7
Publication statusPublished - 2006

Cite this

Mahapatra, R., Poolamai, N., Chattopadhyay, S., Wright, N. G., Chakraborty, A. K., Coleman, K. S., Coleman, P. G., & Burrows, C. P. (2006). Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate. Applied Physics Letters, 88(7).