Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide

X D Pi, P G Coleman, R Harding, G Davies, R M Gwilliam

Research output: Contribution to journalArticle

13 Citations (Scopus)
Original languageEnglish
Pages (from-to)8155-8159
Number of pages5
JournalJournal of Applied Physics
Volume95
Issue number12
Publication statusPublished - 2004

Cite this

Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide. / Pi, X D; Coleman, P G; Harding, R; Davies, G; Gwilliam, R M.

In: Journal of Applied Physics, Vol. 95, No. 12, 2004, p. 8155-8159.

Research output: Contribution to journalArticle

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