Original language | English |
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Pages (from-to) | 8155-8159 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 95 |
Issue number | 12 |
Publication status | Published - 2004 |
Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide
X D Pi, P G Coleman, R Harding, G Davies, R M Gwilliam
Research output: Contribution to journal › Article › peer-review
16
Citations
(SciVal)