Characterization of tetrahedrally bonded amorphous carbon via capacitance techniques

KC Palinginis, Adelina Ilie, B Kleinsorge, WI Milne, JD Cohen

Research output: Contribution to journalArticle

Abstract

We report the results of junction capacitance measurements on thin tetrahedral amorphous carbon (ta-C) films to deduce their defect densities. We find defect densities in the range 3 -7 x 1017 cm"3 in the undoped ta-C films, and roughly an order of magnitude larger in the nitrogen doped (n-type) films. In some cases fairly uniform defect profiles were obtained covering a thickness of a couple of hundreds angstroems. We also observed a thermal activation process of carriers from defect states at the ta-C/c-Si interface with an activation energy in the range of 0.4eV to 0.5eV.
Original languageEnglish
Pages (from-to)197-202
Number of pages6
JournalMRS Proceedings
Volume508
Publication statusPublished - 1998

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    Palinginis, KC., Ilie, A., Kleinsorge, B., Milne, WI., & Cohen, JD. (1998). Characterization of tetrahedrally bonded amorphous carbon via capacitance techniques. MRS Proceedings, 508, 197-202.