Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

T Pochet, Adelina Ilie, F Foulon, B Equer

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageEnglish
Title of host publicationNuclear Science Symposium and Medical Imaging Conference, 1993
PublisherIEEE
Pages450-454
Number of pages5
ISBN (Print)0780314875
DOIs
Publication statusPublished - 1993

Cite this

Pochet, T., Ilie, A., Foulon, F., & Equer, B. (1993). Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD. In Nuclear Science Symposium and Medical Imaging Conference, 1993 (pp. 450-454). IEEE. https://doi.org/10.1109/NSSMIC.1993.701702