Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

T Pochet, Adelina Ilie, F Foulon, B Equer

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageEnglish
Title of host publicationNuclear Science Symposium and Medical Imaging Conference, 1993
PublisherIEEE
Pages450-454
Number of pages5
ISBN (Print)0780314875
DOIs
Publication statusPublished - 1993

Cite this

Pochet, T., Ilie, A., Foulon, F., & Equer, B. (1993). Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD. In Nuclear Science Symposium and Medical Imaging Conference, 1993 (pp. 450-454). IEEE. https://doi.org/10.1109/NSSMIC.1993.701702

Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD. / Pochet, T; Ilie, Adelina; Foulon, F; Equer, B.

Nuclear Science Symposium and Medical Imaging Conference, 1993. IEEE, 1993. p. 450-454.

Research output: Chapter in Book/Report/Conference proceedingChapter

Pochet, T, Ilie, A, Foulon, F & Equer, B 1993, Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD. in Nuclear Science Symposium and Medical Imaging Conference, 1993. IEEE, pp. 450-454. https://doi.org/10.1109/NSSMIC.1993.701702
Pochet T, Ilie A, Foulon F, Equer B. Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD. In Nuclear Science Symposium and Medical Imaging Conference, 1993. IEEE. 1993. p. 450-454 https://doi.org/10.1109/NSSMIC.1993.701702
Pochet, T ; Ilie, Adelina ; Foulon, F ; Equer, B. / Characterization of new A-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD. Nuclear Science Symposium and Medical Imaging Conference, 1993. IEEE, 1993. pp. 450-454
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