Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films

Dimitrios N. Kouvatsos; Filippos V. Farmakis; Despina C. Moschou; Giannis P. Kontogiannopoulos; George J. Papaioannou; Apostolos T. Voutsas

doi:10.1016/j.sse.2007.04.003

Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films

Dimitrios N. Kouvatsos, Filippos V. Farmakis, Despina C. Moschou, Giannis P. Kontogiannopoulos, George J. Papaioannou, Apostolos T. Voutsas

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (SciVal)

Abstract

Double gate thin film transistors (TFTs) were fabricated in advanced excimer-laser annealed (ELA) polycrystalline silicon films, obtained by sequential lateral solidification (SLS), and their characteristics were investigated. The observed back gate effect on the I_DS-V_GS on-off curves indicated fully depleted active layers. The dependence of the device parameters for front gate operation on the back gate bias reflected the conduction behavior, with varying back channel contribution. While the double gate structure needs to be optimized for highest performance, the use of the back gate was determined both to result in effective threshold control, allowing for design flexibility, and also to make possible a reduced avalanche effect for similar drain current levels.

Original language	English
Pages (from-to)	936-940
Number of pages	5
Journal	Solid State Electronics
Volume	51
Issue number	6
DOIs	https://doi.org/10.1016/j.sse.2007.04.003
Publication status	Published - Jun 2007

Keywords

Double gate MOS
Lateral solidification
Polysilicon
Thin film transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.sse.2007.04.003

https://doi.org/10.1016/j.sse.2007.04.003

Cite this

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title = "Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films",

abstract = "Double gate thin film transistors (TFTs) were fabricated in advanced excimer-laser annealed (ELA) polycrystalline silicon films, obtained by sequential lateral solidification (SLS), and their characteristics were investigated. The observed back gate effect on the IDS-VGS on-off curves indicated fully depleted active layers. The dependence of the device parameters for front gate operation on the back gate bias reflected the conduction behavior, with varying back channel contribution. While the double gate structure needs to be optimized for highest performance, the use of the back gate was determined both to result in effective threshold control, allowing for design flexibility, and also to make possible a reduced avalanche effect for similar drain current levels.",

keywords = "Double gate MOS, Lateral solidification, Polysilicon, Thin film transistors",

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doi = "10.1016/j.sse.2007.04.003",

language = "English",

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issn = "0038-1101",

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T1 - Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films

AU - Kouvatsos, Dimitrios N.

AU - Farmakis, Filippos V.

AU - Moschou, Despina C.

AU - Kontogiannopoulos, Giannis P.

AU - Papaioannou, George J.

AU - Voutsas, Apostolos T.

PY - 2007/6

Y1 - 2007/6

N2 - Double gate thin film transistors (TFTs) were fabricated in advanced excimer-laser annealed (ELA) polycrystalline silicon films, obtained by sequential lateral solidification (SLS), and their characteristics were investigated. The observed back gate effect on the IDS-VGS on-off curves indicated fully depleted active layers. The dependence of the device parameters for front gate operation on the back gate bias reflected the conduction behavior, with varying back channel contribution. While the double gate structure needs to be optimized for highest performance, the use of the back gate was determined both to result in effective threshold control, allowing for design flexibility, and also to make possible a reduced avalanche effect for similar drain current levels.

AB - Double gate thin film transistors (TFTs) were fabricated in advanced excimer-laser annealed (ELA) polycrystalline silicon films, obtained by sequential lateral solidification (SLS), and their characteristics were investigated. The observed back gate effect on the IDS-VGS on-off curves indicated fully depleted active layers. The dependence of the device parameters for front gate operation on the back gate bias reflected the conduction behavior, with varying back channel contribution. While the double gate structure needs to be optimized for highest performance, the use of the back gate was determined both to result in effective threshold control, allowing for design flexibility, and also to make possible a reduced avalanche effect for similar drain current levels.

KW - Double gate MOS

KW - Lateral solidification

KW - Polysilicon

KW - Thin film transistors

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UR - https://doi.org/10.1016/j.sse.2007.04.003

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DO - 10.1016/j.sse.2007.04.003

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SN - 0038-1101

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JO - Solid State Electronics

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IS - 6

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Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films

Abstract

Keywords

ASJC Scopus subject areas

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