Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation

G R Nash, S J Bending, P D Buckle, D P Morgan, T M Burke, T Ashley

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)1111-1114
Number of pages4
JournalSemiconductor Science and Technology
Volume17
Issue number10
Publication statusPublished - 2002

Cite this

Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation. / Nash, G R; Bending, S J; Buckle, P D; Morgan, D P; Burke, T M; Ashley, T.

In: Semiconductor Science and Technology, Vol. 17, No. 10, 2002, p. 1111-1114.

Research output: Contribution to journalArticle

@article{557d64d992264d8baefb689521ca05e8,
title = "Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation",
author = "Nash, {G R} and Bending, {S J} and Buckle, {P D} and Morgan, {D P} and Burke, {T M} and T Ashley",
note = "ID number: ISI:000178880200018",
year = "2002",
language = "English",
volume = "17",
pages = "1111--1114",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing",
number = "10",

}

TY - JOUR

T1 - Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation

AU - Nash, G R

AU - Bending, S J

AU - Buckle, P D

AU - Morgan, D P

AU - Burke, T M

AU - Ashley, T

N1 - ID number: ISI:000178880200018

PY - 2002

Y1 - 2002

M3 - Article

VL - 17

SP - 1111

EP - 1114

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

ER -