Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation

G R Nash, S J Bending, P D Buckle, D P Morgan, T M Burke, T Ashley

Research output: Contribution to journal › Article › peer-review

2 Citations (SciVal)

Original language	English
Pages (from-to)	1111-1114
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	17
Issue number	10
Publication status	Published - 2002

ID number: ISI:000178880200018

Cite this

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title = "Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation",

author = "Nash, {G R} and Bending, {S J} and Buckle, {P D} and Morgan, {D P} and Burke, {T M} and T Ashley",

note = "ID number: ISI:000178880200018",

year = "2002",

language = "English",

volume = "17",

pages = "1111--1114",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

number = "10",

}

TY - JOUR

T1 - Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation

AU - Nash, G R

AU - Bending, S J

AU - Buckle, P D

AU - Morgan, D P

AU - Burke, T M

AU - Ashley, T

N1 - ID number: ISI:000178880200018

PY - 2002

Y1 - 2002

M3 - Article

SN - 0268-1242

VL - 17

SP - 1111

EP - 1114

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 10

ER -