Cavity-enhanced room-temperature broadband Raman memory

D. J. Saunders; J. H. D.  Munns; T. F. M. Champion; C. Qiu; K. T. Kaczmarek; E. Poem; P. M. Ledingham; I. A. Walmsley; J. Nunn

doi:10.1103/PhysRevLett.116.090501

Cavity-enhanced room-temperature broadband Raman memory

D. J. Saunders, J. H. D. Munns, T. F. M. Champion, C. Qiu, K. T. Kaczmarek, E. Poem, P. M. Ledingham, I. A. Walmsley, J. Nunn

Department of Physics

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Abstract

Broadband quantum memories hold great promise as multiplexing elements in future photonic quantum information protocols. Alkali-vapor Raman memories combine high-bandwidth storage, on-demand readout, and operation at room temperature without collisional fluorescence noise. However, previous implementations have required large control pulse energies and have suffered from four-wave-mixing noise. Here, we present a Raman memory where the storage interaction is enhanced by a low-finesse birefringent cavity tuned into simultaneous resonance with the signal and control fields, dramatically reducing the energy required to drive the memory. By engineering antiresonance for the anti-Stokes field, we also suppress the four-wave-mixing noise and report the lowest unconditional noise floor yet achieved in a Raman-type warm vapor memory, (15±2)×10−3 photons per pulse, with a total efficiency of (9.5±0.5)%.

Original language	English
Article number	090501
Pages (from-to)	1-5
Number of pages	5
Journal	Physical Review Letters
Volume	116
Issue number	9
Early online date	3 Mar 2016
DOIs	https://doi.org/10.1103/PhysRevLett.116.090501
Publication status	Published - 4 Mar 2016

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10.1103/PhysRevLett.116.090501

https://arxiv.org/abs/1510.04625

Cite this

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title = "Cavity-enhanced room-temperature broadband Raman memory",

abstract = "Broadband quantum memories hold great promise as multiplexing elements in future photonic quantum information protocols. Alkali-vapor Raman memories combine high-bandwidth storage, on-demand readout, and operation at room temperature without collisional fluorescence noise. However, previous implementations have required large control pulse energies and have suffered from four-wave-mixing noise. Here, we present a Raman memory where the storage interaction is enhanced by a low-finesse birefringent cavity tuned into simultaneous resonance with the signal and control fields, dramatically reducing the energy required to drive the memory. By engineering antiresonance for the anti-Stokes field, we also suppress the four-wave-mixing noise and report the lowest unconditional noise floor yet achieved in a Raman-type warm vapor memory, (15±2)×10−3 photons per pulse, with a total efficiency of (9.5±0.5)%.",

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AU - Saunders, D. J.

AU - Munns, J. H. D.

AU - Champion, T. F. M.

AU - Qiu, C.

AU - Kaczmarek, K. T.

AU - Poem, E.

AU - Ledingham, P. M.

AU - Walmsley, I. A.

AU - Nunn, J.

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Y1 - 2016/3/4

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AB - Broadband quantum memories hold great promise as multiplexing elements in future photonic quantum information protocols. Alkali-vapor Raman memories combine high-bandwidth storage, on-demand readout, and operation at room temperature without collisional fluorescence noise. However, previous implementations have required large control pulse energies and have suffered from four-wave-mixing noise. Here, we present a Raman memory where the storage interaction is enhanced by a low-finesse birefringent cavity tuned into simultaneous resonance with the signal and control fields, dramatically reducing the energy required to drive the memory. By engineering antiresonance for the anti-Stokes field, we also suppress the four-wave-mixing noise and report the lowest unconditional noise floor yet achieved in a Raman-type warm vapor memory, (15±2)×10−3 photons per pulse, with a total efficiency of (9.5±0.5)%.

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Cavity-enhanced room-temperature broadband Raman memory

Abstract

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