Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)

Jakob J. Brondijk, Francesco Maddalena, Kamal Asadi, Herman J. van Leijen, Martin Heeney, Paul W.M. Blom, Dago M. de Leeuw

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We investigate the mobility of poly(3-hexylthiophene) (P3HT) over a carrier-density range from 1015 to 1020cm-3. Hole-only diodes were used for densities below 1016cm-3 and field-effect transistors were used for carrier densities higher than 1018cm-3. To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier-density range.

Original languageEnglish
Pages (from-to)138-141
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume249
Issue number1
DOIs
Publication statusPublished - Jan 2012

Keywords

  • Carrier density
  • Charge transport
  • Doping
  • Organic electronics
  • Thiophenes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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