Capacitance and transient photocapacitance studies of tetrahedral amorphous carbon

K. C. Palinginis, A. Ilie, W. I. Milne, J. D. Cohen

Research output: Contribution to journalConference articlepeer-review

Abstract

We have applied junction capacitance and transient photocapacitance measurements to undoped tetrahedral amorphous carbon (ta-C)/silicon carbide (SiC) heterostructures to deduce defect densities and defect distributions in ta-C. The junction capacitance measurements show two thermally activated processes. One can be related to the activation of carriers out of defects at the ta-C/SiC interface while the other one with an activation energy of 0.36eV is an intrinsic property of the ta-C. The defect density at the ta-C/SiC interface is estimated to be roughly 9 ± 2 × 109cm-2. The transient photocapacitance measurements have allowed us to observe the broader band tail of ta-C, giving a value (Urbach energy) of 230meV.

Original languageEnglish
Pages (from-to)R661-R667
JournalMaterials Research Society Symposium - Proceedings
Volume621
DOIs
Publication statusPublished - 2000
EventElectron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays - San Francisco, CA, USA United States
Duration: 25 Apr 200027 Apr 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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