Abstract
We have applied junction capacitance and transient photocapacitance measurements to undoped tetrahedral amorphous carbon (ta-C)/silicon carbide (SiC) heterostructures to deduce defect densities and defect distributions in ta-C. The junction capacitance measurements show two thermally activated processes. One can be related to the activation of carriers out of defects at the ta-C/SiC interface while the other one with an activation energy of 0.36eV is an intrinsic property of the ta-C. The defect density at the ta-C/SiC interface is estimated to be roughly 9 ± 2 × 109cm-2. The transient photocapacitance measurements have allowed us to observe the broader band tail of ta-C, giving a value (Urbach energy) of 230meV.
Original language | English |
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Pages (from-to) | R661-R667 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 621 |
DOIs | |
Publication status | Published - 2000 |
Event | Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays - San Francisco, CA, USA United States Duration: 25 Apr 2000 → 27 Apr 2000 |
Bibliographical note
Funding Information:Work at Oregon was supported by NSF Grant No. DMR 9624002.
Funding
Work at Oregon was supported by NSF Grant No. DMR 9624002.
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering