Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers

H. D. Summers, P. Dowd, I. H. White, M. R.T. Tan

Research output: Contribution to journalArticle

Abstract

The optimization of differential gain and linewidth enhancement factor within VCSEL's is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of αH as low as 0.6 can be achieved.

Original languageEnglish
Pages (from-to)736-738
Number of pages3
JournalIEEE Photonics Technology Letters
Volume7
Issue number7
DOIs
Publication statusPublished - 1 Jan 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers. / Summers, H. D.; Dowd, P.; White, I. H.; Tan, M. R.T.

In: IEEE Photonics Technology Letters, Vol. 7, No. 7, 01.01.1995, p. 736-738.

Research output: Contribution to journalArticle

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