Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers

H. D. Summers; P. Dowd; I. H. White; M. R.T. Tan

doi:10.1109/68.393190

Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers

H. D. Summers, P. Dowd, I. H. White, M. R.T. Tan

Research output: Contribution to journal › Article

Abstract

The optimization of differential gain and linewidth enhancement factor within VCSEL's is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of αH as low as 0.6 can be achieved.

Original language	English
Pages (from-to)	736-738
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	7
Issue number	7
DOIs	https://doi.org/10.1109/68.393190
Publication status	Published - 1 Jan 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

Summers, H. D., Dowd, P., White, I. H., & Tan, M. R. T. (1995). Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers. IEEE Photonics Technology Letters, 7(7), 736-738. https://doi.org/10.1109/68.393190

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10.1109/68.393190

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