Abstract
The optimization of differential gain and linewidth enhancement factor within VCSEL's is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of αH as low as 0.6 can be achieved.
| Original language | English |
|---|---|
| Pages (from-to) | 736-738 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 7 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Jan 1995 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers. / Summers, H. D.; Dowd, P.; White, I. H.; Tan, M. R.T.
In: IEEE Photonics Technology Letters, Vol. 7, No. 7, 01.01.1995, p. 736-738.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Calculation of Differential Gain and Linewidth Enhancement Factor in 980-nm InGaAs Vertical Cavity Surface-Emitting Lasers
AU - Summers, H. D.
AU - Dowd, P.
AU - White, I. H.
AU - Tan, M. R.T.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - The optimization of differential gain and linewidth enhancement factor within VCSEL's is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of αH as low as 0.6 can be achieved.
AB - The optimization of differential gain and linewidth enhancement factor within VCSEL's is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of αH as low as 0.6 can be achieved.
UR - http://www.scopus.com/inward/record.url?scp=0029346640&partnerID=8YFLogxK
U2 - 10.1109/68.393190
DO - 10.1109/68.393190
M3 - Article
VL - 7
SP - 736
EP - 738
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 7
ER -