Abstract
The optimization of differential gain and linewidth enhancement factor within VCSEL's is required to achieve improved performance under dynamic conditions. In this paper, the differential gain and linewidth enhancement factor in an InGaAs-GaAs VCSEL have been calculated over a range of carrier densities and at various wavelengths across the gain spectrum. The results show the importance of low threshold gain values in achieving high differential gain/low linewidth enhancement factor. By temperature tuning the lasing wavelength to shorter wavelengths than the gain peak, values of αH as low as 0.6 can be achieved.
| Original language | English |
|---|---|
| Pages (from-to) | 736-738 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 7 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Jan 1995 |
Funding
Manuscript received February 15, 1995; revised March 7, 1995. This work was supported by the Engineering and Physical Sciences Research Council, UK. H. D. Summers, P. Dowd, and I. H. White are with the School of Physics, University of Bath, Claverton Down, Bath, BA2 7AY, UK. M. R. T. Tan is with Hewlett Packard Laboratories, Palo Alto, CA 94303 USA. IEEE Log Number 941 1723.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering