Abstract
Subwavelength scale antireflection moth-eye structures in silicon were fabricated by a wafer-scale nanoimprint technique and demonstrated an average reflection of 1% in the spectral range from 400 to 1000 nm at normal incidence. An excellent antireflection property out to large incident angles is shown with the average reflection below 8% at 60 degrees. Pyramid array gave an almost constant average reflection of about 10% for an incident angle up to 45 degrees and concave-wall column array produced an approximately linear relation between the average reflection and the incident angles. The technique is promising for improving conversion efficiencies of silicon solar cells.
Original language | English |
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Article number | 263118 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 26 |
DOIs | |
Publication status | Published - 29 Jun 2009 |
Keywords
- elemental semiconductors
- antireflection coatings
- solar cells
- nanolithography
- silicon