Abstract
Semiconductor optical sources that provide high power in a diffraction-limited beam (high brightness) are required for various applications, such as fibre amplifier pump sources, free-space links, dentistry, materials processing. The two most important issues that must be considered in the design of high-power high-brightness semiconductor (S/C) optical sources are catastrophic optical damage (COD) and filamentation of the optical field. Hence, it is indispensable to accurately design both the S/C multilayer material structure and the geometry of the laser cavity to achieve the desired operational characteristics. In addition, device manufacturing costs, packaging complexity (e.g., expensive external micro-optics systems) and tolerance constraints are significant features that have to be taken into account for future device developments.
Original language | English |
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Publication status | Published - 2003 |
Event | Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on - Duration: 1 Jan 2003 → … |
Conference
Conference | Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on |
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Period | 1/01/03 → … |
Keywords
- laser cavity geometry
- semiconductor multilayer material structure
- semiconductor optical source
- semiconductor device packaging
- optical multilayers
- semiconductor device manufacture
- micro-optics system
- laser cavity resonators
- bright parabolic bow-tie laser array
- micro-optics
- catastrophic optical damage
- light diffraction
- diffraction-limited beam
- semiconductor laser arrays
- brightness
- packaging complexity
- light sources
- optical field filamentation
- semiconductor thin films
- optical design techniques