Binding energy of charged excitons in ZnSe-based quantum wells

G V Astakhov, D R Yakovlev, V P Kochereshko, W Ossau, W Faschinger, J Puls, F Henneberger, S A Crooker, Q McCulloch, D Wolverson, N A Gippius, A Waag

Research output: Contribution to journalArticle

80 Citations (Scopus)
Original languageEnglish
Article number165335
JournalPhysical Review B
Volume65
Issue number16
DOIs
Publication statusPublished - 2002

Keywords

  • oscillator strengths
  • semiconductor quantum wells
  • excitons
  • magnetoreflectance
  • Zeeman effect
  • carrier density
  • II-VI semiconductors
  • zinc compounds

Cite this

Astakhov, G. V., Yakovlev, D. R., Kochereshko, V. P., Ossau, W., Faschinger, W., Puls, J., Henneberger, F., Crooker, S. A., McCulloch, Q., Wolverson, D., Gippius, N. A., & Waag, A. (2002). Binding energy of charged excitons in ZnSe-based quantum wells. Physical Review B, 65(16), [165335]. https://doi.org/10.1103/PhysRevB.65.165335