Bias dependent recovery time of all-optical resonant nonlinearity in an InGaAsP/InGaAsP multiquantum well waveguide

I. E. Day; P. A. Snow; R. V. Penty; I. H. White; R. S. Grant; G. T. Kennedy; W. Sibbett; D. A O Davies; M. A. Fisher; M. J. Adams

doi:10.1063/1.112594

Bias dependent recovery time of all-optical resonant nonlinearity in an InGaAsP/InGaAsP multiquantum well waveguide

I. E. Day, P. A. Snow, R. V. Penty, I. H. White, R. S. Grant, G. T. Kennedy, W. Sibbett, D. A O Davies, M. A. Fisher, M. J. Adams

Research output: Contribution to journal › Article › peer-review

Abstract

The refractive nonlinearities due to bandfilling and the plasma effect in a multiquantum well buried heterostructure semiconductor waveguide under reverse bias are probed using self-phase modulation techniques. Modeling of the self-phase modulation has allowed the magnitude of the phase modulation and nonlinearity recovery time constant to be extracted. π radians phase shift has been obtained for a coupled pulse energy of 32 pJ. The nonlinearity recovery time constant is 18±3 ps for an applied field of 34 MV m^-1, limited by thermionic emission from the quantum wells.

Original language	English
Pages (from-to)	2657-2659
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	21
DOIs	https://doi.org/10.1063/1.112594
Publication status	Published - 1 Dec 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.112594

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title = "Bias dependent recovery time of all-optical resonant nonlinearity in an InGaAsP/InGaAsP multiquantum well waveguide",

abstract = "The refractive nonlinearities due to bandfilling and the plasma effect in a multiquantum well buried heterostructure semiconductor waveguide under reverse bias are probed using self-phase modulation techniques. Modeling of the self-phase modulation has allowed the magnitude of the phase modulation and nonlinearity recovery time constant to be extracted. π radians phase shift has been obtained for a coupled pulse energy of 32 pJ. The nonlinearity recovery time constant is 18±3 ps for an applied field of 34 MV m-1, limited by thermionic emission from the quantum wells.",

author = "Day, {I. E.} and Snow, {P. A.} and Penty, {R. V.} and White, {I. H.} and Grant, {R. S.} and Kennedy, {G. T.} and W. Sibbett and Davies, {D. A O} and Fisher, {M. A.} and Adams, {M. J.}",

year = "1994",

month = dec,

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doi = "10.1063/1.112594",

language = "English",

volume = "65",

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journal = "Applied Physics Letters",

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T1 - Bias dependent recovery time of all-optical resonant nonlinearity in an InGaAsP/InGaAsP multiquantum well waveguide

AU - Day, I. E.

AU - Snow, P. A.

AU - Penty, R. V.

AU - White, I. H.

AU - Grant, R. S.

AU - Kennedy, G. T.

AU - Sibbett, W.

AU - Davies, D. A O

AU - Fisher, M. A.

AU - Adams, M. J.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The refractive nonlinearities due to bandfilling and the plasma effect in a multiquantum well buried heterostructure semiconductor waveguide under reverse bias are probed using self-phase modulation techniques. Modeling of the self-phase modulation has allowed the magnitude of the phase modulation and nonlinearity recovery time constant to be extracted. π radians phase shift has been obtained for a coupled pulse energy of 32 pJ. The nonlinearity recovery time constant is 18±3 ps for an applied field of 34 MV m-1, limited by thermionic emission from the quantum wells.

AB - The refractive nonlinearities due to bandfilling and the plasma effect in a multiquantum well buried heterostructure semiconductor waveguide under reverse bias are probed using self-phase modulation techniques. Modeling of the self-phase modulation has allowed the magnitude of the phase modulation and nonlinearity recovery time constant to be extracted. π radians phase shift has been obtained for a coupled pulse energy of 32 pJ. The nonlinearity recovery time constant is 18±3 ps for an applied field of 34 MV m-1, limited by thermionic emission from the quantum wells.

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U2 - 10.1063/1.112594

DO - 10.1063/1.112594

M3 - Article

AN - SCOPUS:0028548551

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EP - 2659

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Bias dependent recovery time of all-optical resonant nonlinearity in an InGaAsP/InGaAsP multiquantum well waveguide

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