Bias dependent recovery time of all-optical resonant nonlinearity in an InGaAsP/InGaAsP multiquantum well waveguide

I. E. Day, P. A. Snow, R. V. Penty, I. H. White, R. S. Grant, G. T. Kennedy, W. Sibbett, D. A O Davies, M. A. Fisher, M. J. Adams

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The refractive nonlinearities due to bandfilling and the plasma effect in a multiquantum well buried heterostructure semiconductor waveguide under reverse bias are probed using self-phase modulation techniques. Modeling of the self-phase modulation has allowed the magnitude of the phase modulation and nonlinearity recovery time constant to be extracted. π radians phase shift has been obtained for a coupled pulse energy of 32 pJ. The nonlinearity recovery time constant is 18±3 ps for an applied field of 34 MV m-1, limited by thermionic emission from the quantum wells.

Original languageEnglish
Pages (from-to)2657-2659
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 1 Dec 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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