Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

M. J. Wallace; P. R. Edwards; M. J. Kappers; M. A. Hopkins; F. Oehler; S. Sivaraya; D. W E Allsopp; R. A. Oliver; C. J. Humphreys; R. W. Martin

doi:10.1063/1.4890497

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

M. J. Wallace, P. R. Edwards, M. J. Kappers, M. A. Hopkins, F. Oehler, S. Sivaraya, D. W E Allsopp, R. A. Oliver, C. J. Humphreys, R. W. Martin

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Abstract

Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2-10 μm in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30-40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (∼100 μm) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN.

Original language	English
Article number	033105
Journal	Journal of Applied Physics
Volume	116
Issue number	3
DOIs	https://doi.org/10.1063/1.4890497
Publication status	Published - 21 Jul 2014

ASJC Scopus subject areas

General Physics and Astronomy

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Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Allsopp, D. W. E., Oliver, R. A., Humphreys, C. J., & Martin, R. W. (2014). Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Journal of Applied Physics, 116(3), Article 033105. https://doi.org/10.1063/1.4890497

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title = "Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode",

abstract = "Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2-10 μm in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30-40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (∼100 μm) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN. ",

author = "Wallace, {M. J.} and Edwards, {P. R.} and Kappers, {M. J.} and Hopkins, {M. A.} and F. Oehler and S. Sivaraya and Allsopp, {D. W E} and Oliver, {R. A.} and Humphreys, {C. J.} and Martin, {R. W.}",

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doi = "10.1063/1.4890497",

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T1 - Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

AU - Wallace, M. J.

AU - Edwards, P. R.

AU - Kappers, M. J.

AU - Hopkins, M. A.

AU - Oehler, F.

AU - Sivaraya, S.

AU - Allsopp, D. W E

AU - Oliver, R. A.

AU - Humphreys, C. J.

AU - Martin, R. W.

PY - 2014/7/21

Y1 - 2014/7/21

N2 - Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2-10 μm in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30-40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (∼100 μm) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN.

AB - Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2-10 μm in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30-40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (∼100 μm) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN.

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M1 - 033105

ER -

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

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