Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

M. J. Wallace, P. R. Edwards, M. J. Kappers, M. A. Hopkins, F. Oehler, S. Sivaraya, D. W E Allsopp, R. A. Oliver, C. J. Humphreys, R. W. Martin

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Abstract

Micron-scale mapping has been employed to study a contacted InGaN/GaN LED using combined electroluminescence (EL), cathodoluminescence (CL), and electron beam induced current (EBIC). Correlations between parameters, such as the EBIC and CL intensity, were studied as a function of applied bias. The CL and EBIC maps reveal small areas, 2-10 μm in size, which have increased nonradiative recombination rate and/or a lower conductivity. The CL emission from these spots is blue shifted, by 30-40 meV. Increasing the reverse bias causes the size of the spots to decrease, due to competition between in-plane diffusion and drift in the growth direction. EL mapping shows large bright areas (∼100 μm) which also have increased EBIC, indicating domains of increased conductivity in the p and/or n-GaN.

Original languageEnglish
Article number033105
JournalJournal of Applied Physics
Volume116
Issue number3
DOIs
Publication statusPublished - 21 Jul 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Allsopp, D. W. E., Oliver, R. A., Humphreys, C. J., & Martin, R. W. (2014). Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Journal of Applied Physics, 116(3), [033105]. https://doi.org/10.1063/1.4890497