Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy

I. J. Griffin, D. Wolverson, J. J. Davies, M. Emam-Ismail, J. Heffernan, A. H. Kean, S. W. Bland, G. Duggan

Research output: Contribution to journalArticle

Abstract

The spin-flip Raman scattering by the epitaxial layers of quaternary aluminum gallium indium phosphide alloys lattice matched to gallium arsenide has been investigated in order to gain insight into the band structure parameters of this material system. Both electron and hole spin-flip Raman signals were observed and were identified by their behaviour on the application of a biaxial strain to the epilayer. The gyromagnetic ratios of the electron and hole were determined and it was found that a three-band κ·p model gives a good description of the experimental values of the conduction band gyromagnetic ratio as a function of composition; these data provide a new insight into the dependence of the spin-orbit splitting on composition.

Original languageEnglish
Pages (from-to)1030-1034
Number of pages5
JournalSemiconductor Science and Technology
Volume15
Issue number11
DOIs
Publication statusPublished - 1 Nov 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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