Band alignment in SnS thin-film solar cells: Possible origin of the low conversion efficiency

Lee A Burton, Aron Walsh

Research output: Contribution to journalArticle

94 Citations (Scopus)
158 Downloads (Pure)

Abstract

Tin sulfide is an attractive absorber material for low-cost thin-film solar cells. Despite the ideal physical properties of bulk SnS, the photovoltaic conversion efficiencies achieved in devices to date have been no greater than 2%. Assessment of the valence band energy of the stable orthorhombic phase of SnS reveals a low ionisation potential (4.7 eV) in comparison to typical absorber materials (CdTe, CuInSe2, and Cu2ZnSnS4). A band mis-alignment is therefore predicted with commonly used back contact and buffer layers. Alternative configurations are proposed that should improve device performance.
Original languageEnglish
Article number132111
Number of pages3
JournalApplied Physics Letters
Volume102
Issue number13
Early online date4 Apr 2013
DOIs
Publication statusPublished - Apr 2013

Keywords

  • buffer layers
  • ionisation potential
  • valence bands
  • tin compounds
  • thin film devices
  • solar cells
  • semiconductor thin films
  • IV-VI semiconductors

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