Auger processes in silicon nanocrystals assemblies

D. Kovalev, M. Fujii

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Many properties of materials often undergo significant changes in a certain size range. For example, different forms of silicon nanocrystal assemblies have relatively high photoluminescence quantum yield due to morphological and quantum size effects. This chapter describes the main decay channel for photogenerated electron-hole pairs confined in silicon nanocrystals at high levels of optical excitation. We will argue that nonradiative Auger decay processes inherently limit quantum yield of photoluminescence of this system due to efficient competition with the radiation recombination. We further discuss implications of doping of silicon nanocrystals for their light emitting properties.
Original languageEnglish
Title of host publicationSilicon nanophotonics
Subtitle of host publicationBasic principles, current status and perspectives
EditorsL. Khriachtchev
Place of PublicationSingapore
PublisherPan Stanford Publishing
Pages397-424
ISBN (Electronic)9789814241137
ISBN (Print)9789814241113
DOIs
Publication statusPublished - 2008

Fingerprint

assemblies
nanocrystals
silicon
photoluminescence
decay
radiation
excitation

Cite this

Kovalev, D., & Fujii, M. (2008). Auger processes in silicon nanocrystals assemblies. In L. Khriachtchev (Ed.), Silicon nanophotonics: Basic principles, current status and perspectives (pp. 397-424). Singapore: Pan Stanford Publishing. https://doi.org/10.4032/9789814241137

Auger processes in silicon nanocrystals assemblies. / Kovalev, D.; Fujii, M.

Silicon nanophotonics: Basic principles, current status and perspectives. ed. / L. Khriachtchev. Singapore : Pan Stanford Publishing, 2008. p. 397-424.

Research output: Chapter in Book/Report/Conference proceedingChapter

Kovalev, D & Fujii, M 2008, Auger processes in silicon nanocrystals assemblies. in L Khriachtchev (ed.), Silicon nanophotonics: Basic principles, current status and perspectives. Pan Stanford Publishing, Singapore, pp. 397-424. https://doi.org/10.4032/9789814241137
Kovalev D, Fujii M. Auger processes in silicon nanocrystals assemblies. In Khriachtchev L, editor, Silicon nanophotonics: Basic principles, current status and perspectives. Singapore: Pan Stanford Publishing. 2008. p. 397-424 https://doi.org/10.4032/9789814241137
Kovalev, D. ; Fujii, M. / Auger processes in silicon nanocrystals assemblies. Silicon nanophotonics: Basic principles, current status and perspectives. editor / L. Khriachtchev. Singapore : Pan Stanford Publishing, 2008. pp. 397-424
@inbook{f70d0b72360543059a17a16a02483b26,
title = "Auger processes in silicon nanocrystals assemblies",
abstract = "Many properties of materials often undergo significant changes in a certain size range. For example, different forms of silicon nanocrystal assemblies have relatively high photoluminescence quantum yield due to morphological and quantum size effects. This chapter describes the main decay channel for photogenerated electron-hole pairs confined in silicon nanocrystals at high levels of optical excitation. We will argue that nonradiative Auger decay processes inherently limit quantum yield of photoluminescence of this system due to efficient competition with the radiation recombination. We further discuss implications of doping of silicon nanocrystals for their light emitting properties.",
author = "D. Kovalev and M. Fujii",
year = "2008",
doi = "10.4032/9789814241137",
language = "English",
isbn = "9789814241113",
pages = "397--424",
editor = "L. Khriachtchev",
booktitle = "Silicon nanophotonics",
publisher = "Pan Stanford Publishing",
address = "Singapore",

}

TY - CHAP

T1 - Auger processes in silicon nanocrystals assemblies

AU - Kovalev, D.

AU - Fujii, M.

PY - 2008

Y1 - 2008

N2 - Many properties of materials often undergo significant changes in a certain size range. For example, different forms of silicon nanocrystal assemblies have relatively high photoluminescence quantum yield due to morphological and quantum size effects. This chapter describes the main decay channel for photogenerated electron-hole pairs confined in silicon nanocrystals at high levels of optical excitation. We will argue that nonradiative Auger decay processes inherently limit quantum yield of photoluminescence of this system due to efficient competition with the radiation recombination. We further discuss implications of doping of silicon nanocrystals for their light emitting properties.

AB - Many properties of materials often undergo significant changes in a certain size range. For example, different forms of silicon nanocrystal assemblies have relatively high photoluminescence quantum yield due to morphological and quantum size effects. This chapter describes the main decay channel for photogenerated electron-hole pairs confined in silicon nanocrystals at high levels of optical excitation. We will argue that nonradiative Auger decay processes inherently limit quantum yield of photoluminescence of this system due to efficient competition with the radiation recombination. We further discuss implications of doping of silicon nanocrystals for their light emitting properties.

UR - http://www.scopus.com/inward/record.url?scp=84879279308&partnerID=8YFLogxK

UR - http://dx.doi.org/10.4032/9789814241137

UR - http://www.panstanford.com/books/9789814241113.html#toc

U2 - 10.4032/9789814241137

DO - 10.4032/9789814241137

M3 - Chapter

SN - 9789814241113

SP - 397

EP - 424

BT - Silicon nanophotonics

A2 - Khriachtchev, L.

PB - Pan Stanford Publishing

CY - Singapore

ER -