Auger processes in silicon nanocrystals assemblies

D. Kovalev, M. Fujii

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Many properties of materials often undergo significant changes in a certain size range. For example, different forms of silicon nanocrystal assemblies have relatively high photoluminescence quantum yield due to morphological and quantum size effects. This chapter describes the main decay channel for photogenerated electron-hole pairs confined in silicon nanocrystals at high levels of optical excitation. We will argue that nonradiative Auger decay processes inherently limit quantum yield of photoluminescence of this system due to efficient competition with the radiation recombination. We further discuss implications of doping of silicon nanocrystals for their light emitting properties.
Original languageEnglish
Title of host publicationSilicon nanophotonics
Subtitle of host publicationBasic principles, current status and perspectives
EditorsL. Khriachtchev
Place of PublicationSingapore
PublisherPan Stanford Publishing
Pages397-424
ISBN (Electronic)9789814241137
ISBN (Print)9789814241113
DOIs
Publication statusPublished - 2008

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  • Cite this

    Kovalev, D., & Fujii, M. (2008). Auger processes in silicon nanocrystals assemblies. In L. Khriachtchev (Ed.), Silicon nanophotonics: Basic principles, current status and perspectives (pp. 397-424). Pan Stanford Publishing. https://doi.org/10.4032/9789814241137