Atomistic Simulation of Y-Doped alpha-Alumina Interfaces

S Galmarini, U Aschauer, P Bowen, S C Parker

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29 Citations (SciVal)


The exact mechanism of creep resistance enhancement due to yttrium (Y) doping in alpha-alumina is still subject to speculation, although it is known that dopants segregate strongly to grain boundaries. The current work applies atomistic simulation techniques to the study of segregation to a reasonable number of interfaces in Y-doped alpha-alumina. Y is shown to segregate stronger to surfaces than grain boundaries and to form ordered structures at the interfaces, which may decrease diffusion coefficients. These Y-ordered regions may act as nucleation sites for YAG precipitates particularly for rapid sintering techniques.
Original languageEnglish
Pages (from-to)3643-3651
Number of pages9
JournalJournal of the American Ceramic Society
Issue number11
Publication statusPublished - 2008


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