Atomistic Simulation of Y-Doped alpha-Alumina Interfaces

S Galmarini, U Aschauer, P Bowen, S C Parker

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The exact mechanism of creep resistance enhancement due to yttrium (Y) doping in alpha-alumina is still subject to speculation, although it is known that dopants segregate strongly to grain boundaries. The current work applies atomistic simulation techniques to the study of segregation to a reasonable number of interfaces in Y-doped alpha-alumina. Y is shown to segregate stronger to surfaces than grain boundaries and to form ordered structures at the interfaces, which may decrease diffusion coefficients. These Y-ordered regions may act as nucleation sites for YAG precipitates particularly for rapid sintering techniques.
Original languageEnglish
Pages (from-to)3643-3651
Number of pages9
JournalJournal of the American Ceramic Society
Volume91
Issue number11
DOIs
Publication statusPublished - 2008

Fingerprint

Aluminum Oxide
grain boundary
aluminum oxide
Grain boundaries
Alumina
Doping (additives)
Yttrium
yttrium
Creep resistance
creep
nucleation
simulation
Precipitates
Nucleation
Sintering
sintering

Cite this

Atomistic Simulation of Y-Doped alpha-Alumina Interfaces. / Galmarini, S; Aschauer, U; Bowen, P; Parker, S C.

In: Journal of the American Ceramic Society, Vol. 91, No. 11, 2008, p. 3643-3651.

Research output: Contribution to journalArticle

Galmarini, S ; Aschauer, U ; Bowen, P ; Parker, S C. / Atomistic Simulation of Y-Doped alpha-Alumina Interfaces. In: Journal of the American Ceramic Society. 2008 ; Vol. 91, No. 11. pp. 3643-3651.
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