Atomic layer deposition method of metal (II), (0), or (IV) containing film layer

The present invention relates to the use of a M (II) primary precursor of formula (I): M(OCR1R2R3)L (I) wherein: M is Sn or Ge or Pb; L is a ligand displaying ALD reactivity for a secondary precursor; R1, R2, and R3 are each independently selected from: H or a linear or branched alkyl groups, and wherein at least one of R1, R2, and R3 is a linear or branched alkyl group, or an adduct of a metal (M) (II) precursor of formula (I), in the atomic layer deposition (ALD) of a M (II), M (0), or a M (IV) containing film layer on a substrate. Preferably, the compound of formula (I) is [Sn(OiPr)2], [Sn(OtBu)2]2, [Sn{OCH(Me)CH(Me)2}2], [Sn{OC(Me)2CH2Me}2] or Sn(dmamp)2 where dmamp is 2-dimethylamino-2-methylpropanol.