Atmospheric-pressure chemical vapor deposition of group IVb metal phosphide thin films from tetrakisdimethylamidometal complexes and cyclohexylphosphine

C S Blackman; C J Carmalt; S A O'Neill; I P Parkin; L Apostolico; K C Molloy

doi:10.1021/cm031161f

Atmospheric-pressure chemical vapor deposition of group IVb metal phosphide thin films from tetrakisdimethylamidometal complexes and cyclohexylphosphine

C S Blackman
, C J Carmalt
, S A O'Neill
, I P Parkin
, L Apostolico
, K C Molloy

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

19 Citations (SciVal)

Abstract

The dual-source atmospheric-pressure chemical vapor deposition of group IVb metal phosphide films from tetrakisdimethylamido(metal) and cyclohexylphosphine precursors is presented. Deposition took place at low temperatures (

Original language	English
Pages (from-to)	1120-1125
Number of pages	6
Journal	Chemistry of Materials
Volume	16
Issue number	6
DOIs	https://doi.org/10.1021/cm031161f
Publication status	Published - 2004

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ID number: ISI:000220304100024

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10.1021/cm031161f

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@article{431554b9f67d48e6869487303d3bc50f,

title = "Atmospheric-pressure chemical vapor deposition of group IVb metal phosphide thin films from tetrakisdimethylamidometal complexes and cyclohexylphosphine",

abstract = "The dual-source atmospheric-pressure chemical vapor deposition of group IVb metal phosphide films from tetrakisdimethylamido(metal) and cyclohexylphosphine precursors is presented. Deposition took place at low temperatures (",

author = "Blackman, \{C S\} and Carmalt, \{C J\} and O'Neill, \{S A\} and Parkin, \{I P\} and L Apostolico and Molloy, \{K C\}",

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year = "2004",

doi = "10.1021/cm031161f",

language = "English",

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journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

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T1 - Atmospheric-pressure chemical vapor deposition of group IVb metal phosphide thin films from tetrakisdimethylamidometal complexes and cyclohexylphosphine

AU - Blackman, C S

AU - Carmalt, C J

AU - O'Neill, S A

AU - Parkin, I P

AU - Apostolico, L

AU - Molloy, K C

N1 - ID number: ISI:000220304100024

PY - 2004

Y1 - 2004

N2 - The dual-source atmospheric-pressure chemical vapor deposition of group IVb metal phosphide films from tetrakisdimethylamido(metal) and cyclohexylphosphine precursors is presented. Deposition took place at low temperatures (

AB - The dual-source atmospheric-pressure chemical vapor deposition of group IVb metal phosphide films from tetrakisdimethylamido(metal) and cyclohexylphosphine precursors is presented. Deposition took place at low temperatures (

U2 - 10.1021/cm031161f

DO - 10.1021/cm031161f

M3 - Article

SN - 0897-4756

VL - 16

SP - 1120

EP - 1125

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 6

ER -

Atmospheric-pressure chemical vapor deposition of group IVb metal phosphide thin films from tetrakisdimethylamidometal complexes and cyclohexylphosphine

Abstract

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