Abstract
The dual-source atmospheric-pressure chemical vapor deposition of group IVb metal phosphide films from tetrakisdimethylamido(metal) and cyclohexylphosphine precursors is presented. Deposition took place at low temperatures (
Original language | English |
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Pages (from-to) | 1120-1125 |
Number of pages | 6 |
Journal | Chemistry of Materials |
Volume | 16 |
Issue number | 6 |
Publication status | Published - 2004 |