Analytical model of threshold voltage of MOSFET structures with Gaussian distribution of channel carriers

Djordje Baljozovic, Rifat Ramovic, Dimitrije Tjapkin, Milan Merkle

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Original language	English
Title of host publication	ETRAN 2001: Society for Electronics, Telecommunications, Computers, Automation, and Nuclear Engineering
Pages	178-181
Number of pages	4
Volume	IV
Publication status	Published - 2001

Cite this

Analytical model of threshold voltage of MOSFET structures with Gaussian distribution of channel carriers. / Baljozovic, Djordje; Ramovic, Rifat ; Tjapkin, Dimitrije et al.
ETRAN 2001: Society for Electronics, Telecommunications, Computers, Automation, and Nuclear Engineering. Vol. IV 2001. p. 178-181.

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

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author = "Djordje Baljozovic and Rifat Ramovic and Dimitrije Tjapkin and Milan Merkle",

year = "2001",

language = "English",

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volume = "IV",

pages = "178--181",

booktitle = "ETRAN 2001: Society for Electronics, Telecommunications, Computers, Automation, and Nuclear Engineering",

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T1 - Analytical model of threshold voltage of MOSFET structures with Gaussian distribution of channel carriers

AU - Baljozovic, Djordje

AU - Ramovic, Rifat

AU - Tjapkin, Dimitrije

AU - Merkle, Milan

PY - 2001

Y1 - 2001

M3 - Chapter in a published conference proceeding

SN - 86-80509-40-X

VL - IV

SP - 178

EP - 181

BT - ETRAN 2001: Society for Electronics, Telecommunications, Computers, Automation, and Nuclear Engineering

ER -