Analysis of the mechanisms for impaired high-temperature, high-speed performance of 1.3 μm InGaAsP lasers

A. B. Massara, K. A. Williams, J. C L Yong, A. Onischenko, J. M. Rorison, R. V. Penty, I. H. White, A. Galbraith, P. Crump, M. Silver

Research output: Contribution to journalConference articlepeer-review


In this paper, the static and dynamic performance of multi quantum-well (MQW) 1.3 μm InGaAsP Fabry Perot lasers is assessed experimentally and theoretically to identify the mechanisms responsible for impaired high speed performance at elevated temperature. Initially, threshold currents and spontaneous emission spectra are characterized for a range of temperatures from room temperature to 85 °C to indicate a significant increase in non-radiative current contributions. Preliminary estimates are made for the contributions of leakage and Auger recombination rates, found from the dependence of integrated spontaneous emission with carrier density. Drift-diffusion modelling is found to accurately predict the trend of threshold currents over temperature. Using gain modelling good agreement is found between the measured and predicted integrated spontaneous emission intensity. Gain measurements at 85 °C indicate a reduction in RIN frequency to 63% of the 25 °C value which matches well with experimental small signal performance.

Original languageEnglish
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1 Jan 2000
EventPhysics and Simulation of Optoelectronic Devices VIII - San Jose, CA, USA
Duration: 24 Jan 200028 Jan 2000

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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