Analysis of polarisation pinning in vertical cavity surface emitting lasers using etched trenches

L. J. Sargent, J. M. Rorison, M. Kuball, R. V. Penty, I. H. White, P. J. Heard, M. R T Tan, S. W. Corzine, D. I. Babic, S. Y. Wang

Research output: Chapter or section in a book/report/conference proceedingChapter in a published conference proceeding

1 Citation (SciVal)

Abstract

Recent work [1] has shown that the etching of deep trenches in close proximity to GaAs VCSEL apertures consistently causes the linear TE polarisation of the emission to be pinned in a direction parallel to the line etch. Further enhancement of this polarisation pinning has been achieved by post-annealing after etching. Initial studies have been carried out using photoluminescence and Raman measurements of the VCSEL wafer before and after etching as well as after annealing. Modelling the observed shift in the optical cavity (longitudinal) mode has indicated that etching introduces strain perpendicular to the etch in the active region of the VCSEL of 4 × 108 dyn/cm2. The strain causes the cavity mode to shift to longer wavelength and reduces the spontaneous emission in the direction perpendicular to the etched trenches. The strain introduced by etching is believed to be the origin of this polarisation pinning effect. Measurements of the spontaneous emission profile across the VCSEL facet after etching give valuable information on the mechanisms involved.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Pages186-192
Number of pages7
ISBN (Print)0819430978
Publication statusPublished - 1 Jan 1999
EventProceedings of the 1999 Vertical-Cavity Surface-Emitting Lasers III - San Jose, CA, USA
Duration: 25 Jan 199926 Jan 1999

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume3627
ISSN (Print)0277-786X

Conference

ConferenceProceedings of the 1999 Vertical-Cavity Surface-Emitting Lasers III
CitySan Jose, CA, USA
Period25/01/9926/01/99

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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