Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

C. X. Ren; B. Rouet-Leduc; J. T. Griffiths; E. Bohacek; M. J. Wallace; P. R. Edwards; M. A. Hopkins; D. W E Allsopp; M. J. Kappers; R. W. Martin; R. A. Oliver

doi:10.1016/j.spmi.2016.03.036

Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

C. X. Ren, B. Rouet-Leduc, J. T. Griffiths, E. Bohacek, M. J. Wallace, P. R. Edwards, M. A. Hopkins, D. W E Allsopp, M. J. Kappers, R. W. Martin, R. A. Oliver

Research output: Contribution to journal › Article › peer-review

7 Citations (SciVal)

Abstract

The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.

Original language	English
Pages (from-to)	118-124
Journal	Superlattices and Microstructures
Volume	99
Early online date	26 Mar 2016
DOIs	https://doi.org/10.1016/j.spmi.2016.03.036
Publication status	Published - Nov 2016

Keywords

Defect
Electroluminescence
LED
Semiconductor

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10.1016/j.spmi.2016.03.036

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@article{0bc26cf1e51d4cbcb015c43914c08445,

title = "Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs",

abstract = "The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.",

keywords = "Defect, Electroluminescence, LED, Semiconductor",

author = "Ren, {C. X.} and B. Rouet-Leduc and Griffiths, {J. T.} and E. Bohacek and Wallace, {M. J.} and Edwards, {P. R.} and Hopkins, {M. A.} and Allsopp, {D. W E} and Kappers, {M. J.} and Martin, {R. W.} and Oliver, {R. A.}",

year = "2016",

month = nov,

doi = "10.1016/j.spmi.2016.03.036",

language = "English",

volume = "99",

pages = "118--124",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Elsevier Academic Press Inc",

}

TY - JOUR

T1 - Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

AU - Ren, C. X.

AU - Rouet-Leduc, B.

AU - Griffiths, J. T.

AU - Bohacek, E.

AU - Wallace, M. J.

AU - Edwards, P. R.

AU - Hopkins, M. A.

AU - Allsopp, D. W E

AU - Kappers, M. J.

AU - Martin, R. W.

AU - Oliver, R. A.

PY - 2016/11

Y1 - 2016/11

N2 - The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.

AB - The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.

KW - Defect

KW - Electroluminescence

KW - LED

KW - Semiconductor

UR - http://www.scopus.com/inward/record.url?scp=84975513296&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1016/j.spmi.2016.03.036

U2 - 10.1016/j.spmi.2016.03.036

DO - 10.1016/j.spmi.2016.03.036

M3 - Article

AN - SCOPUS:84975513296

SN - 0749-6036

VL - 99

SP - 118

EP - 124

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

Abstract

Keywords

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Manufacturing of Nano-Engineered III-N Semiconductors

MC2-Electron Microscopy (EM)

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Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

Abstract

Keywords

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Fingerprint

Projects

Manufacturing of Nano-Engineered III-N Semiconductors

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MC2-Electron Microscopy (EM)

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