The effect of growth conditions on the electrical and optical properties of p-GaSb/n-GaAs junctions grown by MOVPE has been studied. Low growth temperature (540°C), HCl treatment of the GaAs substrate prior to growth and addition of a 100nm InAs passivation layer were all found to increase the short circuit current (I sc) under illumination and also the spectral response from the GaSb layer. An undoped GaAs buffer increased the open circuit V oc and improved the diode rectification but at the expense of photocurrent from the GaSb layer. Preliminary results suggest that n-doping the GaAs buffer layer may yield both high V oc and high current collection.
|Number of pages||4|
|Publication status||Published - 2002|
|Event||29th IEEE Photovoltaic Specialists Conference - New Orleans, USA United States|
Duration: 18 May 2002 → 23 May 2002
|Conference||29th IEEE Photovoltaic Specialists Conference|
|Country||USA United States|
|Period||18/05/02 → 23/05/02|