Abstract
The paper studies the performance of a gas sensor based on an organic/inorganic diode for ammonia (NH3) sensing under atmospheric conditions at room temperature and different humidity levels. The diode structure consists of a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) deposited on top of n-type GaAs. The PEDOT:PSS layer that is filled with different ratios of graphene oxide (GO) is prepared from the solution phase. We show that the current–voltage (I–V) response of the diode and the sensing performance improve significantly by adding GO to the PEDOT:PSS layer. The sensing response is highest for a diode with 0.04 wt.% of GO. At room temperature, the PEDOT:PSS:GO (0.04 wt.%)/n-GaAs Schottky diode shows a sensitivity of 194 upon exposure to 20 ppm of NH3 with rapid response and recovery times between 95 and 121 s, respectively. The NH3 sensor based on PEDOT:PSS:GO is cost-effective, environmentally friendly, and easy to fabricate using low-cost solution-processing methods.
Original language | English |
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Article number | 1800037 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 12 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 2018 |
Keywords
- ammonia sensors
- GaAs
- graphene oxide
- PEDOT:PSS
- Schottky diodes
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics