All-chemical vapor deposited graphene/silicon nitride TFTs

W I Milne; Matthew Cole; M. Drapeko; P. Kidambi; Kai Ying; Sungsik Lee; Sieglinde M L Pfaendler; Kenneth B.K. Teo; S. Hofmann; Arokia Nathan

doi:10.1149/05008.0217ecst

All-chemical vapor deposited graphene/silicon nitride TFTs

W I Milne
, Matthew Cole
, M. Drapeko
, P. Kidambi
, Kai Ying
, Sungsik Lee
, Sieglinde M L Pfaendler
, Kenneth B.K. Teo
, S. Hofmann
, Arokia Nathan

Department of Electronic & Electrical Engineering

University of Cambridge
Aixtron Ltd

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

1 Citation (SciVal)

Abstract

All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm ²V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through allchemical vapor deposition processes.

Original language	English
Title of host publication	Thin Film Transistors 11, TFT 2012, (8th ed )
Pages	217-221
Number of pages	5
Volume	50
DOIs	https://doi.org/10.1149/05008.0217ecst
Publication status	Published - 2012
Event	11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, USA United States Duration: 8 Oct 2012 → 10 Oct 2012

Conference

Conference	11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
Country/Territory	USA United States
City	Honolulu, HI
Period	8/10/12 → 10/10/12

ASJC Scopus subject areas

General Engineering

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10.1149/05008.0217ecst

Cite this

Milne, WI, Cole, M, Drapeko, M, Kidambi, P, Ying, K, Lee, S, Pfaendler, SML, Teo, KBK, Hofmann, S & Nathan, A 2012, All-chemical vapor deposited graphene/silicon nitride TFTs. in Thin Film Transistors 11, TFT 2012, (8th ed ). vol. 50, pp. 217-221, 11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012, Honolulu, HI, USA United States, 8/10/12. https://doi.org/10.1149/05008.0217ecst

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title = "All-chemical vapor deposited graphene/silicon nitride TFTs",

abstract = "All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm 2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through allchemical vapor deposition processes. ",

author = "Milne, \{W I\} and Matthew Cole and M. Drapeko and P. Kidambi and Kai Ying and Sungsik Lee and Pfaendler, \{Sieglinde M L\} and Teo, \{Kenneth B.K.\} and S. Hofmann and Arokia Nathan",

year = "2012",

doi = "10.1149/05008.0217ecst",

language = "English",

isbn = "9781607683568",

volume = "50",

pages = "217--221",

booktitle = "Thin Film Transistors 11, TFT 2012, (8th ed )",

note = "11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 ; Conference date: 08-10-2012 Through 10-10-2012",

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AU - Milne, W I

AU - Cole, Matthew

AU - Drapeko, M.

AU - Kidambi, P.

AU - Ying, Kai

AU - Lee, Sungsik

AU - Pfaendler, Sieglinde M L

AU - Teo, Kenneth B.K.

AU - Hofmann, S.

AU - Nathan, Arokia

PY - 2012

Y1 - 2012

N2 - All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm 2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through allchemical vapor deposition processes.

AB - All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm 2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through allchemical vapor deposition processes.

UR - https://www.scopus.com/pages/publications/84885799726

U2 - 10.1149/05008.0217ecst

DO - 10.1149/05008.0217ecst

M3 - Chapter in a published conference proceeding

AN - SCOPUS:84885799726

SN - 9781607683568

VL - 50

SP - 217

EP - 221

BT - Thin Film Transistors 11, TFT 2012, (8th ed )

T2 - 11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012

Y2 - 8 October 2012 through 10 October 2012

ER -

All-chemical vapor deposited graphene/silicon nitride TFTs

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ASJC Scopus subject areas

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