All-chemical vapor deposited graphene/silicon nitride TFTs

W I Milne, Matthew Cole, M. Drapeko, P. Kidambi, Kai Ying, Sungsik Lee, Sieglinde M L Pfaendler, Kenneth B.K. Teo, S. Hofmann, Arokia Nathan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm 2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through allchemical vapor deposition processes.

Original languageEnglish
Title of host publicationThin Film Transistors 11, TFT 2012, (8th ed )
Pages217-221
Number of pages5
Volume50
DOIs
Publication statusPublished - 2012
Event11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, USA United States
Duration: 8 Oct 201210 Oct 2012

Conference

Conference11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
CountryUSA United States
CityHonolulu, HI
Period8/10/1210/10/12

ASJC Scopus subject areas

  • Engineering(all)

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