Abstract
Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.
| Original language | English |
|---|---|
| Article number | 123302 |
| Journal | Applied Physics Letters |
| Volume | 112 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 19 Mar 2018 |
Funding
The authors would like to acknowledge Professor P. W. M. Blom and Professor D. M. de Leeuw for fruitful discussions and F. Keller and V. Maus for their technical help. K.A. acknowledges the Alexander von Humboldt Foundation for funding provided in the framework of the Sofja Kovalevskaja Award endowed by the Federal Ministry of Education and Research, Germany. The authors acknowledge the support from the Max-Planck Institute for Polymer Research (Mainz, Germany).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)