TY - JOUR
T1 - Advances in nano-enabled GaN photonic devices
AU - Wang, Wang N
AU - Shields, Philip A
AU - Liu, Chaowang
AU - Allsopp, Duncan W E
AU - Causa, Federica
N1 - Quantum Sensing and Nanophotonic Devices VIII. 23-27 January 2011. San Francisco, CA, United States.
PY - 2011
Y1 - 2011
N2 - In this work, the results are presented of a nanorod LED array. If the lateral size of the nanorods is small enough, it is possible to achieve a degree of lateral confinement. If the nanorods are ordered into a suitable photonic lattice, then this will reduce the lateral spontaneous emission and enhance emission along the vertical axis via the Purcell effect. Additionally there is a degree of dislocation filtering that can occur [1]. However, one potential drawback of this device is the large free surface that borders the multi-quantum well active region. Nevertheless, it has been shown that the surface recombination in the nitride materials is the lowest of all III-V semiconductors. Results of SEM, PL, EL, and far field pattern are presented to compare the progressive effect of using photo-assisted electroless and wet etching [2]. It can be seen that over time the photo-assisted electroless method clearly delineates the active MQW region, possibly as a result of the different etch rate of InGaN. Alternatively, a purely chemical etching method was used. With a narrowing of the nanorods, there is a progressive blue shift of the photoluminescence peak. The optical image of the emission shows that there are well-defined lines of enhanced light propagation that match the symmetry of the nanorod array, thus showing there is a photonic crystal effect.
AB - In this work, the results are presented of a nanorod LED array. If the lateral size of the nanorods is small enough, it is possible to achieve a degree of lateral confinement. If the nanorods are ordered into a suitable photonic lattice, then this will reduce the lateral spontaneous emission and enhance emission along the vertical axis via the Purcell effect. Additionally there is a degree of dislocation filtering that can occur [1]. However, one potential drawback of this device is the large free surface that borders the multi-quantum well active region. Nevertheless, it has been shown that the surface recombination in the nitride materials is the lowest of all III-V semiconductors. Results of SEM, PL, EL, and far field pattern are presented to compare the progressive effect of using photo-assisted electroless and wet etching [2]. It can be seen that over time the photo-assisted electroless method clearly delineates the active MQW region, possibly as a result of the different etch rate of InGaN. Alternatively, a purely chemical etching method was used. With a narrowing of the nanorods, there is a progressive blue shift of the photoluminescence peak. The optical image of the emission shows that there are well-defined lines of enhanced light propagation that match the symmetry of the nanorod array, thus showing there is a photonic crystal effect.
UR - http://www.scopus.com/inward/record.url?scp=79955770164&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1117/12.871427
U2 - 10.1117/12.871427
DO - 10.1117/12.871427
M3 - Article
SN - 0277-786X
VL - 7945
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
M1 - 794523
T2 - Quantum Sensing and Nanophotonic Devices VIII, January 23, 2011 - January 27, 2011
Y2 - 1 January 2011
ER -